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    Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
    2.
    发明申请
    Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts 失效
    用于形成二氧化硅基涂膜的组合物，二氧化硅基涂膜及其制备方法和电子部件

    公开(公告)号：US20060052566A1

    公开(公告)日：2006-03-09

    申请号：US11207199

    申请日：2005-08-19

    申请人： Haruaki Sakurai ,  Koichi Abe ,  Kazuhiro Enomoto ,  Shigeru Nobe

    发明人： Haruaki Sakurai ,  Koichi Abe ,  Kazuhiro Enomoto ,  Shigeru Nobe

    IPC分类号： C08L83/04 ,  B32B9/04

    CPC分类号： H01L23/5329 ,  C09D183/02 ,  C09D183/04 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T428/31663 ,  H01L2924/00

    摘要： The composition for forming silica based coating of the invention comprises siloxane resin such as an alkoxysilane as component (a), a solvent such as an alcohol capable of dissolving the siloxane resin as component (b), an ammonium salt, etc. as component (c) and a thermal decomposing/volatile compound as component (d), wherein the stress of the coating obtained by heat treatment at 150° C./3 min is 10 MPa and the specific permittivity of the silica based coating obtained by final curing is less than 3.0. The composition for forming silica based coating according to the invention can form a silica based coating having low permittivity, excellent adhesion and sufficient mechanical strength.

    摘要翻译： 用于形成本发明的二氧化硅基涂层的组合物包含作为组分（a）的烷氧基​​硅烷等硅氧烷树脂，作为组分（b）的硅氧烷树脂溶解性醇的溶剂，铵盐等作为组分（ c）和作为组分（d）的热分解/挥发性化合物，其中通过在150℃/分钟热处理获得的涂层的应力为10MPa，并且通过最终固化获得的二氧化硅基涂层的比介电常数为 小于3.0。 根据本发明的用于形成二氧化硅基涂层的组合物可以形成具有低介电常数，优异的粘附性和足够的机械强度的二氧化硅基涂层。

    METAL POLISHING SLURRY AND POLISHING METHOD
    5.
    发明申请
    METAL POLISHING SLURRY AND POLISHING METHOD 有权
    金属抛光浆和抛光方法

    公开(公告)号：US20100120250A1

    公开(公告)日：2010-05-13

    申请号：US12527607

    申请日：2008-02-22

    申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

    发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

    IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C23F1/18 ,  C23F1/26 ,  H01L21/30625 ,  H01L21/3212

    摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.

    摘要翻译： 本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。 使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度大的金属研磨浆料，并且抛光面的平坦度高。 这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

    CMP Polishing Liquid and Polishing Method
    7.
    发明申请
    CMP Polishing Liquid and Polishing Method 审中-公开
    CMP抛光液和抛光方法

    公开(公告)号：US20090094901A1

    公开(公告)日：2009-04-16

    申请号：US12298342

    申请日：2007-04-24

    申请人： Takashi Shinoda ,  Shigeru Nobe ,  Takaaki Tanaka

    发明人： Takashi Shinoda ,  Shigeru Nobe ,  Takaaki Tanaka

    IPC分类号： B24B37/00 ,  H01L21/304 ,  H01L21/306 ,  C09K3/14

    CPC分类号： H01L21/7684 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212

    摘要： A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)−(A) is 650 {acute over (Å)} or less, wherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more; and the (B) is a polishing amount of the interlayer insulation film in a stripe-shaped patterned area having a total width of 1,000 μm or more wherein a wiring metal region having a width of 90 μm and the interlayer insulation film region having a width of 10 μm are aligned alternately on the substrate when the interlayer insulation film in the field area having the width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more.

    摘要翻译： 一种能够在化学机械抛光中使用的CMP抛光液，包括：第一化学机械抛光步骤，其在其表面上抛光具有包含凸凹区域的层间绝缘膜的基板的导电物质层，阻挡层涂层 沿着所述层间绝缘膜的表面，并且所述导电物质层在填充所述凹区域的同时涂覆所述阻挡层，从而使所述阻挡层暴露在所述凸部区域中。 以及第二化学机械抛光步骤，通过对在所述第一化学机械抛光步骤中暴露的所述阻挡层进行抛光来使所述凸起区域中的所述层间绝缘膜曝光; 其特征在于，差异（B） - （A）为650（锐锐度（））以下，其中，（A）是场内层间绝缘膜的场区域中的层间绝缘膜的研磨量 将形成在基板上的层间绝缘膜区域的宽度为1,000μm以上的区域抛光至深度为400（）以上的深度; （B）是总宽度为1000μm以上的条状图案区域中的层间绝缘膜的研磨量，其中宽度为90μm的布线金属区域和宽度为90μm的层间绝缘膜区域 当在衬底上形成的层间绝缘膜区域的宽度为1,000μm或更大的场区域中的层间绝缘膜被抛光到深度为400（）时，交替地在衬底上对准10微米。 或者更多。

    Polishing slurry for CMP and polishing method
    8.
    发明申请
    Polishing slurry for CMP and polishing method 审中-公开
    抛光浆料用于CMP和抛光方法

    公开(公告)号：US20070117394A1

    公开(公告)日：2007-05-24

    申请号：US11545787

    申请日：2006-10-11

    申请人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

    发明人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

    IPC分类号： H01L21/66 ,  H01L21/461

    CPC分类号： C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

    摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

    摘要翻译： 本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如 作为铜。 本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。 用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。