发明申请
US20060199311A1 ANTIFUSE HAVING TANTALUM OXYNITRIDE FILM AND METHOD FOR MAKING SAME
审中-公开
具有氧化铝薄膜的抗菌剂及其制备方法
- 专利标题： ANTIFUSE HAVING TANTALUM OXYNITRIDE FILM AND METHOD FOR MAKING SAME
- 专利标题（中）： 具有氧化铝薄膜的抗菌剂及其制备方法
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申请号： US11419942申请日： 2006-05-23
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公开(公告)号： US20060199311A1公开(公告)日： 2006-09-07
- 发明人: Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
- 申请人： Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film. Embodiments include a method of operating an antifuse, comprising applying a voltage across electrodes of a capacitor having a tantalum oxynitride film and forming a hole in the tantalum oxynitride film.
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