发明申请
- 专利标题： THIN FILM TRANSISTOR AND METHOD FOR PRODUCTION THEREOF
- 专利标题（中）： 薄膜晶体管及其生产方法
-
申请号： US11420302申请日： 2006-05-25
-
公开(公告)号： US20060199317A1公开(公告)日： 2006-09-07
- 发明人: Masafumi Kunii
- 申请人： Masafumi Kunii
- 优先权： JPP2003-336939 20030929
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.
信息查询
IPC分类:
