LIGHT-RECEIVING ELEMENT AND DISPLAY DEVICE
    1.
    发明申请
    LIGHT-RECEIVING ELEMENT AND DISPLAY DEVICE 有权
    光接收元件和显示设备

    公开(公告)号:US20090159893A1

    公开(公告)日:2009-06-25

    申请号:US12331159

    申请日:2008-12-09

    IPC分类号: H01L31/0368 H01L31/12

    摘要: A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

    摘要翻译: 光接收元件包括:第一导电型半导体区域,被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域,被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上,并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度 和第二导电型半导体区域。 光接收元件还包括:第一电极,被配置为电连接到第一导电型半导体区域; 第二电极,其被配置为电连接到所述第二导电型半导体区域; 以及控制电极,其被配置为形成在存在于所述元件形成表面上的相对区域中。

    Thin Film Transistor and Method For Production Thereof
    2.
    发明申请
    Thin Film Transistor and Method For Production Thereof 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:US20070298553A1

    公开(公告)日:2007-12-27

    申请号:US11763744

    申请日:2007-06-15

    申请人: Masafumi Kunii

    发明人: Masafumi Kunii

    摘要: The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.

    摘要翻译: 根据本发明的薄膜晶体管的制造方法涉及反应热CVD工艺以形成有源层和源极 - 漏极层。 这提供了除去结晶半导体薄膜的附加步骤的优点。 所形成的叠层薄膜晶体管由原来的晶体半导体薄膜组成。 具有由晶体半导体薄膜形成的有源层和源极 - 漏极层,堆叠的薄膜晶体管的工作速度比由非晶半导体薄膜形成的速度更快。 消除结晶步骤的另一个优点是质量均匀,否则会受到结晶的不利影响。 此外,源极 - 漏极层由先前掺杂的晶体半导体薄膜形成的事实意味着在成膜之后不需要引入杂质的任何步骤。

    Method of manufacturing thin film semiconductor device, and thin film semiconductor device
    3.
    发明申请
    Method of manufacturing thin film semiconductor device, and thin film semiconductor device 审中-公开
    制造薄膜半导体器件的方法和薄膜半导体器件

    公开(公告)号:US20060051903A1

    公开(公告)日:2006-03-09

    申请号:US11196109

    申请日:2005-08-03

    申请人: Masafumi Kunii

    发明人: Masafumi Kunii

    IPC分类号: H01L21/8232 H01L21/335

    CPC分类号: H01L27/12 H01L27/1248

    摘要: TFTs are formed on a substrate, and a layer insulation film containing no hydroxyl group in at least a lowermost layer film is formed in the state of covering the TFTs. Thereafter, a heat treatment is conducted in a moisture atmosphere, whereby oxygen or hydrogen is bound to dangling bonds present in a semiconductor thin film constituting the TFTs, and an enhancement of the denseness of the layer insulation film is contrived. The layer insulation film includes silicon nitride, for example.

    摘要翻译: 在基板上形成TFT,在覆盖TFT的状态下,形成在至少最下层膜中不含羟基的层绝缘膜。 此后,在水分气氛中进行热处理,由此氧或氢结合存在于构成TFT的半导体薄膜中的悬挂键,并且提高了层间绝缘膜的致密性。 层间绝缘膜例如包括氮化硅。

    Color display device
    5.
    发明授权
    Color display device 有权
    彩色显示设备

    公开(公告)号:US5943107A

    公开(公告)日:1999-08-24

    申请号:US128091

    申请日:1998-08-03

    摘要: A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

    摘要翻译: 诸如有源矩阵型液晶显示装置的彩色显示装置具有第一基板,其具有以矩阵形式布置的像素电极,与各个像素电极相关的开关元件和与各个像素电极对准的滤色器。 第一基板由层叠结构构成,其包括以上述顺序叠加具有开关元件的第一层,具有滤色器的第二层,包括填充由开关元件呈现的凸部的平坦化膜的第三层和 滤色器,以及具有与滤色器对准的像素电极的第四层。 显示装置还具有包括对置电极的第二基板,并且与第一基板邻接,留下预定的间隙。 在第一和第二基板之间的间隙中充入液晶。

    Liquid crystal display
    7.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US08269927B2

    公开(公告)日:2012-09-18

    申请号:US12435493

    申请日:2009-05-05

    IPC分类号: G02F1/133 G02F1/1343

    CPC分类号: G02F1/13318

    摘要: Disclosed herein is a liquid crystal display including a liquid crystal panel including, a first substrate, a second substrate opposed to said first substrate, and a liquid crystal layer interposed between said first substrate and said second substrate, a plurality of pixels being arrayed in a first direction and in a second direction orthogonal to said first direction in a pixel area provided in a plane where said first substrate and said second substrate are opposed.

    摘要翻译: 本发明公开了一种液晶显示装置,其特征在于,包括:液晶面板,具有第一基板,与所述第一基板相对的第二基板以及插入在所述第一基板和所述第二基板之间的液晶层,多个像素排列成 在与所述第一方向垂直的第二方向上设置在所述第一基板和所述第二基板相对的平面中的像素区域中。

    Thin-film semiconductor device having a thin-film transistor for circuits that differs from a thin-film transistor for pixels
    8.
    发明授权
    Thin-film semiconductor device having a thin-film transistor for circuits that differs from a thin-film transistor for pixels 有权
    具有薄膜晶体管的薄膜半导体器件,该薄膜晶体管与用于像素的薄膜晶体管不同

    公开(公告)号:US06563136B2

    公开(公告)日:2003-05-13

    申请号:US09921532

    申请日:2001-08-03

    申请人: Masafumi Kunii

    发明人: Masafumi Kunii

    IPC分类号: H01L2904

    摘要: A thin-film semiconductor device which has a pixel array section and a peripheral circuit section arranged around it, said pixel array section containing pixel electrodes and thin-film transistors for pixels which switch the pixel electrodes, said peripheral circuit section containing driving circuits each having thin-film transistors for circuits which drive the thin-film transistors for pixels, said each thin-film transistor having the laminate structure having a semiconductor thin film, a gate electrode, and a gate insulating film interposed between them, and said semiconductor thin film having a channel region inside the end of the gate electrode, a lightly doped region outside said channel region, a heavily doped region outside said lightly doped region, and a concentration boundary which separates said lightly doped region and heavily doped region from each other, wherein said concentration boundary measured from the end of said gate electrode is positioned more inside in said thin-film transistor for circuits than in said thin-film transistor for pixels.

    摘要翻译: 一种薄膜半导体器件,其具有布置在其周围的像素阵列部分和外围电路部分,所述像素阵列部分包含像素电极和用于切换像素电极的像素的薄膜晶体管,所述外围电路部分包含驱动电路,每个驱动电路具有 所述薄膜晶体管具有驱动用于像素的薄膜晶体管的电路,所述薄膜晶体管具有层叠结构,其具有介于其间的半导体薄膜,栅极电极和栅极绝缘膜,并且所述半导体薄膜 在栅电极的端部内部具有通道区域,在所述沟道区域外部的轻掺杂区域,所述轻掺杂区域外部的重掺杂区域和将所述轻掺杂区域和重掺杂区域彼此分离的浓度边界,其中 从所述栅电极的端部测量的所述浓度边界位于所述第th中更靠内侧 用于电路的膜内晶体管比用于像素的所述薄膜晶体管。

    Method of manufacturing semiconductor device by two stage heating of deposited noncrystalline semiconductor
    9.
    发明授权
    Method of manufacturing semiconductor device by two stage heating of deposited noncrystalline semiconductor 失效
    通过二阶段加热沉积的非晶半导体制造半导体器件的方法

    公开(公告)号:US06403497B1

    公开(公告)日:2002-06-11

    申请号:US09568917

    申请日:2000-05-10

    IPC分类号: H01L2131

    摘要: A polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600° C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550° C. to 650° C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20° C./min, preferably about 5° C./min, to a prescribed recrystallization temperature within the range about 550° C. to 650° C. Further, between the step of film formation and the step of solid phase recrystallization, the film may be thermally treated at a relatively low temperature, e.g., over 300° C. and preferably between approximately 400° C. to 500° C. for a period of several minutes, such as 30 minutes, to remove hydrogen from the film prior to solid phase recrystallization.

    摘要翻译: 通过最初形成可以由非晶硅或微晶硅构成的硅膜,通过现有技术的方法获得具有大晶粒尺寸,例如1μm至2μm直径或更大的多晶或多晶硅膜 或在低温下通过化学气相沉积(CVD)方法,例如通过等离子体化学气相沉积(PCVD),其中硅烷气体用例如氢气,氩气或氦气稀释,在非晶相中包含微晶区域。 温度例如在室温至600℃的范围内。随后进行固相重结晶以形成多晶膜,该多晶膜在相对较低的温度下在约550℃至 在惰性气氛(例如N或Ar)中,在温度逐渐升高的情况下,例如在升温速率低于20℃/分钟的情况下,时间为约数小时-40小时,优选为650℃ 约5℃/分钟 在约550℃至650℃的范围内的规定的再结晶温度。此外,在成膜步骤和固相重结晶步骤之间,可以在相对较低的温度例如超过300℃下热处理该膜 并且优选在约400℃至500℃之间,持续数分钟,例如30分钟的时间,以在固相重结晶之前从膜中除去氢。

    Process of crystallizing semiconductor thin film and laser irradiation
    10.
    发明授权
    Process of crystallizing semiconductor thin film and laser irradiation 有权
    半导体薄膜和激光照射系统结晶过程

    公开(公告)号:US06388386B1

    公开(公告)日:2002-05-14

    申请号:US09550293

    申请日:2000-04-14

    IPC分类号: B05D306

    摘要: A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for the division region.

    摘要翻译: 通过用激光束照射半导体薄膜来预先形成在基板上的半导体薄膜的结晶工艺包括:准备步骤,将基板的表面划分为多个划分区域,并使激光束成形以进行调整 激光束的照射区域,使得一个分割区域被一次激光束共同照射;结晶步骤,用激光束照射一个分割区域,同时光学地调制激光束的强度,使得 在照射区域上投影循环光和暗图案,并且在移动图案之后至少一次照射相同的分割区域,使得移位之后的图案的亮和暗部分不与图案的那些重叠 转移前 以及扫描步骤,将激光束的照射区域移动到下一个分割区域,并重复用于分割区域的结晶步骤。