发明申请
- 专利标题: Semiconductor devices with rotated substrates and methods of manufacture thereof
- 专利标题(中): 具有旋转基板的半导体器件及其制造方法
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申请号: US11076080申请日: 2005-03-09
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公开(公告)号: US20060202277A1公开(公告)日: 2006-09-14
- 发明人: Matthias Hierlemann , Chun-Yung Sung , Brian Greene , Manfred Eller
- 申请人: Matthias Hierlemann , Chun-Yung Sung , Brian Greene , Manfred Eller
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
Integrated circuits are oriented on a substrate at an angle that is rotated between 0 to 45 degrees from a direction parallel or perpendicular to a preferred crystalline plane direction, such as the cleavage plane, of the substrate. Parameters such as stress and mobility of transistors may be optimized by adjusting the angle of rotation of the substrate. For a rotated substrate CMOS device design, other stress control measures may be used, such as a stress control or tensile liner, over an NMOS transistor, PMOS transistor, or both, to further adjust the stress and improve performance.
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