- 专利标题: Fast voltage regulators for charge pumps
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申请号: US11080070申请日: 2005-03-14
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公开(公告)号: US20060202668A1公开(公告)日: 2006-09-14
- 发明人: Hieu Tran , Sang Nguyen , Anh Ly , Hung Nguyen , Wingfu Lau , Nasrin Jaffari , Thuan Vu , Vishal Sarin , Loc Hoang
- 申请人: Hieu Tran , Sang Nguyen , Anh Ly , Hung Nguyen , Wingfu Lau , Nasrin Jaffari , Thuan Vu , Vishal Sarin , Loc Hoang
- 主分类号: G05F5/00
- IPC分类号: G05F5/00 ; G05F1/00
摘要:
A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.
公开/授权文献
- US07362084B2 Fast voltage regulators for charge pumps 公开/授权日:2008-04-22