- 专利标题: Film formation method and apparatus for semiconductor process
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申请号: US11367339申请日: 2006-03-06
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公开(公告)号: US20060207504A1公开(公告)日: 2006-09-21
- 发明人: Kazuhide Hasebe , Mitsuhiro Okada , Chaeho Kim , Byounghoon Lee , Pao-Hwa Chou
- 申请人: Kazuhide Hasebe , Mitsuhiro Okada , Chaeho Kim , Byounghoon Lee , Pao-Hwa Chou
- 优先权: JP2005-070034 20050311; JP2006-004192 20060111
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.