发明申请
US20060208253A1 Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor 有权
有机薄膜晶体管,包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法

  • 专利标题: Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor
  • 专利标题(中): 有机薄膜晶体管,包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
  • 申请号: US11378011
    申请日: 2006-03-17
  • 公开(公告)号: US20060208253A1
    公开(公告)日: 2006-09-21
  • 发明人: Sung-Jin KimJae-Bon KooMin-Chul Suh
  • 申请人: Sung-Jin KimJae-Bon KooMin-Chul Suh
  • 优先权: KR10-2005-0022945 20050319; KR10-2005-0023841 20050322
  • 主分类号: H01L29/08
  • IPC分类号: H01L29/08
Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor
摘要:
An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/06 ..按其形状区分的;按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08 ...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的;并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的
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