A deposition apparatus (10) comprises a plasma generation chamber (14) to which a pressure is applied with a treatment gas to generate plasma, a deposition chamber (20) in which a substrate is placed and a film is formed on the substrate, and a distribution plate (17) having a plurality of holes and provided between the plasma generation chamber (14) and the deposition chamber (20). A diameter of the hole in the distribution plate (17) has a size such that a pressure of the plasma generation chamber (14) is 2.0 times or more as high as that of the deposition chamber (20). The deposition apparatus (10) further comprises means for applying a predetermined bias voltage between the plasma generation chamber (14) and the deposition chamber (20).