发明申请
- 专利标题： Junction semiconductor device and method for manufacturing the same
- 专利标题（中）： 结半导体器件及其制造方法
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申请号： US11386850申请日： 2006-03-23
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公开(公告)号： US20060214200A1公开(公告)日： 2006-09-28
- 发明人: Ken-ichi Nonaka , Hideki Hashimoto , Seiichi Yokoyama , Kensuke Iwanaga , Yoshimitsu Saito
- 申请人： Ken-ichi Nonaka , Hideki Hashimoto , Seiichi Yokoyama , Kensuke Iwanaga , Yoshimitsu Saito
- 专利权人： HONDA MOTOR CO., LTD
- 当前专利权人： HONDA MOTOR CO., LTD
- 优先权： JPP2005-084693 20050323
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
A junction semiconductor device having a drain region comprising a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region comprising a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.
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