- 专利标题： Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
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申请号： US11433670申请日： 2006-05-15
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公开(公告)号： US20060215722A1公开(公告)日： 2006-09-28
- 发明人: Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Atsuo Isobe
- 申请人： Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Atsuo Isobe
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2001-292410 20010925; JP2001-328371 20011025; JP2001-256189 20020830
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.
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