发明申请
- 专利标题: METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTEM AND DEPOSITION METHODS INCLUDING THE SAME
- 专利标题(中): 用于控制沉积系统中沉积物形成的方法和包括其的沉积方法
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申请号: US10414787申请日: 2003-04-16
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公开(公告)号: US20060216416A1公开(公告)日: 2006-09-28
- 发明人: Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
- 申请人: Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
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