发明申请
- 专利标题： Method for cleaning heat treatment apparatus
- 专利标题（中）： 热处理设备的清洗方法
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申请号： US10553828申请日： 2004-04-20
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公开(公告)号： US20060216949A1公开(公告)日： 2006-09-28
- 发明人: Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
- 申请人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
- 优先权： JP2003-117663 20030422
- 国际申请： PCT/JP04/05644 WO 20040420
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
The present invention is a method of cleaning a heat treatment apparatus that deposits an SiO2 film by mean of TEOS on an object to be processed contained in a treatment vessel capable of forming a vacuum. In the cleaning method, the heat treatment apparatus is cleaned by supplying an HF gas and an NH3 gas into the treatment vessel.