公开(公告)号：US20060216949A1

公开(公告)日：2006-09-28

申请号：US10553828

申请日：2004-04-20

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/67109 ,  C23C16/4405

摘要： The present invention is a method of cleaning a heat treatment apparatus that deposits an SiO2 film by mean of TEOS on an object to be processed contained in a treatment vessel capable of forming a vacuum. In the cleaning method, the heat treatment apparatus is cleaned by supplying an HF gas and an NH3 gas into the treatment vessel.

摘要翻译： 本发明是一种清洗热处理装置的方法，该热处理装置通过TEOS将SiO 2膜沉积在能够形成真空的处理容器中的待加工物体上。 在清洗方法中，通过向处理容器供给HF气体和NH 3气体来清洁热处理装置。

公开(公告)号：US20060216941A1

公开(公告)日：2006-09-28

申请号：US10552262

申请日：2004-04-20

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC分类号： H01L21/306 ,  B44C1/22 ,  C23F1/00

CPC分类号： H01L21/31116

摘要： A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.

摘要翻译： 二氧化硅膜去除方法能够在比室温高的温度下除去二氧化硅膜，例如天然氧化物膜或化学氧化物膜。 在可以抽真空的处理容器18中去除在工件上形成的二氧化硅膜的二氧化硅膜去除方法使用含有HF气体和NH 3气体的混合气体来除去二氧化硅膜。 通过使用含有HF气体和NH 3气体的混合气体，可以有效地从工件表面除去二氧化硅膜。

公开(公告)号：US07611995B2

公开(公告)日：2009-11-03

申请号：US10552262

申请日：2004-04-20

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC分类号： H01L21/302

CPC分类号： H01L21/31116

摘要： A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.

摘要翻译： 二氧化硅膜去除方法能够在比室温高的温度下除去二氧化硅膜，例如天然氧化物膜或化学氧化物膜。 在可以抽真空的处理容器18中去除在工件上形成的二氧化硅膜的二氧化硅膜去除方法使用含有HF气体和NH 3气体的混合气体来除去二氧化硅膜。 通过使用含有HF气体和NH 3气体的混合气体，能够有效地从工件表面除去二氧化硅膜。

公开(公告)号：US20060213539A1

公开(公告)日：2006-09-28

申请号：US10549851

申请日：2004-03-25

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC分类号： B08B9/00 ,  H05H1/00

CPC分类号： C23C16/4408 ,  C23C16/4404

摘要： This invention is a cleaning method of a film-forming unit that forms a thin film on an object to be processed by supplying a process gas into a reaction chamber containing the object to be processed, the method comprising a purging step of purging an inside of the reaction chamber by supplying into the reaction chamber a nitrogen-including gas that includes nitrogen and that is capable of being activated. The purging step has a step of nitriding a surface of a member in the reaction chamber by activating the nitrogen-including gas.

摘要翻译： 本发明是一种成膜单元的清洗方法，其通过在含有待处理物体的反应室中供给处理气体而在被处理物上形成薄膜，该方法包括：清洗步骤， 反应室通过向反应室供应包含氮气并且能够活化的含氮气体。 清洗步骤具有通过活化含氮气体来使反应室中的构件的表面氮化的步骤。

公开(公告)号：US20050136693A1

公开(公告)日：2005-06-23

申请号：US10942103

申请日：2004-09-16

申请人： Kazuhide Hasebe ,  Yutaka Takahashi ,  Kota Umezawa ,  Satoshi Takagi ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Yutaka Takahashi ,  Kota Umezawa ,  Satoshi Takagi ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC分类号： C23C16/34 ,  C23C16/455 ,  H01L21/205 ,  H01L21/314 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/3185

摘要： The present invention is a thermal processing method of conducting a thermal process to an object to be processed, a base film having been formed on a surface of the object to be processed, the base film consisting of a SiO2 film or a SiON film. The method includes: an arranging step of arranging the object to be processed in a processing container; and a laminating step of supplying a source gas and an ammonia gas alternatively and repeatedly, so as to form a silicon nitride film on the base film repeatedly, the source gas being selected from a group consisting of dichlorosilane, hexachlorodisilane and tetrachlorosilane.

摘要翻译： 本发明是对待处理物体进行热处理的热处理方法，在被处理物的表面上形成的基膜，由SiO 2 2 电影或SiON电影。 该方法包括：将处理对象物置于处理容器内的布置步骤; 以及层叠步骤，交替重复地供给源气体和氨气，以在所述基膜上重复形成氮化硅膜，所述源气体选自二氯硅烷，六氯二硅烷和四氯硅烷。

公开(公告)号：US07758920B2

公开(公告)日：2010-07-20

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

公开(公告)号：US20050284575A1

公开(公告)日：2005-12-29

申请号：US11196398

申请日：2005-08-04

申请人： Kazuhide Hasebe ,  Atsushi Endo ,  Mitsuhiro Okada ,  Jun Ogawa ,  Akihito Yamamoto ,  Takashi Nakao ,  Masaki Kamimura ,  Yukihiro Ushiku

发明人： Kazuhide Hasebe ,  Atsushi Endo ,  Mitsuhiro Okada ,  Jun Ogawa ,  Akihito Yamamoto ,  Takashi Nakao ,  Masaki Kamimura ,  Yukihiro Ushiku

IPC分类号： C23C16/44 ,  H01L21/00 ,  C23F1/00 ,  B44C1/22

CPC分类号： H01L21/67248 ,  C23C16/4405 ,  H01L21/67109

摘要： A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process. By means of the temperature changing unit, the target temperature is set to a temperature at which adhesion of reaction by-products to the specific portion may be inhibited, at the process to the substrate, while the target temperature is set to a temperature at which corrosion of the specific portion may be inhibited, at the cleaning process.

摘要翻译： 本发明的处理系统包括：反应容器，其中放置有待处理的基板，处理气体供给机构，其将处理气体在处理过程中提供给反应容器;清洗气体供给机构 在清洁过程中向反应容器提供腐蚀性清洁气体，连接到反应室的气体排出构件，加热反应容器的特定部分的加热单元和气体排出通路构件， 温度检测单元，其检测特定部分的温度;温度控制单元，其基于由温度检测单元检测的检测值以特定部分变为预定目标温度的方式控制加热单元;温度控制单元， 改变单元，其在过程到基板和清洁过程之间改变目标温度。 通过温度变化单元，将目标温度设定为在基板处理时可以抑制反应副产物对特定部分的粘附的温度，同时将目标温度设定为温度 在清洗过程中可能会抑制特定部分的腐蚀。

公开(公告)号：US20060032443A1

公开(公告)日：2006-02-16

申请号：US11188736

申请日：2005-07-26

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC分类号： C23C16/00

CPC分类号： C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US07462571B2

公开(公告)日：2008-12-09

申请号：US11188736

申请日：2005-07-26

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC分类号： H01L21/31

CPC分类号： C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20070032047A1

公开(公告)日：2007-02-08

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  G06F19/00 ,  H01L21/20

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。