发明申请
- 专利标题： Vapor phase treatment of dielectric materials
- 专利标题（中）： 介电材料的气相处理
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申请号： US11086010申请日： 2005-03-22
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公开(公告)号： US20060216952A1公开(公告)日： 2006-09-28
- 发明人: Anil Bhanap , Robert Roth , Kikue Burnham , Brian Daniels , Denis Endisch , Ilan Golecki
- 申请人： Anil Bhanap , Robert Roth , Kikue Burnham , Brian Daniels , Denis Endisch , Ilan Golecki
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
公开/授权文献
- US07678712B2 Vapor phase treatment of dielectric materials 公开/授权日：2010-03-16
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