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    LIGHTWEIGHT TITANIUM ALUMINIDE VALVES AND METHODS FOR THE MANUFACTURE THEREOF
    1.
    发明申请
    LIGHTWEIGHT TITANIUM ALUMINIDE VALVES AND METHODS FOR THE MANUFACTURE THEREOF 有权
    轻质钛酸钡阀及其制造方法

    公开(公告)号：US20110049410A1

    公开(公告)日：2011-03-03

    申请号：US12549098

    申请日：2009-08-27

    申请人： Ilan Golecki ,  Robert Franconi ,  Mike McCollum ,  Amer Aizaz

    发明人： Ilan Golecki ,  Robert Franconi ,  Mike McCollum ,  Amer Aizaz

    IPC分类号： F16K27/00 ,  B21K1/20

    CPC分类号： B21K1/20 ,  F16K27/02 ,  F16K27/04 ,  F16K27/06 ,  Y10T29/49405 ,  Y10T29/49426 ,  Y10T137/7036

    摘要： Embodiments of a lightweight, high temperature airborne valve are provided. In one embodiment, the airborne vale includes a valve element and a flowbody. The flowbody is formed at least partially from a titanium aluminide alloy and has a flow passage therethrough in which the valve element is movably mounted. Embodiments of a method for producing such a lightweight, high temperature airborne valve are also provided. In one embodiment, the method includes the steps of forming a lightweight flowbody at least partially from a titanium aluminide alloy, hot isostatically pressing the lightweight flowbody, and machining the lightweight flowbody to desired dimensions.

    摘要翻译： 提供了一种轻质高温气动阀的实施例。 在一个实施例中，空气传动阀包括阀元件和流体。 流体至少部分地由钛铝合金形成，并且具有穿过其中的流动通道，其中阀元件可移动地安装。 还提供了用于制造这种轻质高温气动阀的方法的实施例。 在一个实施例中，该方法包括以下步骤：至少部分地由钛铝合金形成轻量级流动体，热等静压压轻质流体，以及将轻质流体体加工成所需尺寸。

    Electrical discharge machining of carbon-containing work pieces
    3.
    发明授权
    Electrical discharge machining of carbon-containing work pieces 失效
    含碳工件的放电加工

    公开(公告)号：US06800828B2

    公开(公告)日：2004-10-05

    申请号：US09823622

    申请日：2001-03-31

    申请人： Ilan Golecki

    发明人： Ilan Golecki

    IPC分类号： B23H500

    CPC分类号： H01M8/026 ,  B23H9/00 ,  H01M8/0213 ,  Y10T428/24149 ,  Y10T428/24273 ,  Y10T428/30

    摘要： Complex features and fine details in a Carbon—Carbon work piece, for example, are formed by electrical discharge machining (EDM). An electrode used in the EDM is made of a material that is mechanically and chemically compatible with Carbon—Carbon composite material.

    摘要翻译： 例如，通过放电加工（EDM）形成碳 - 碳工件中的复杂特征和细微细节。 用于EDM的电极由与碳 - 碳复合材料机械和化学相容的材料制成。

    Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films
    4.
    发明授权
    Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films 失效
    消除Si型注入和重结晶SOS膜的p型电活动和增加沟道迁移率的方法

    公开(公告)号：US4588447A

    公开(公告)日：1986-05-13

    申请号：US624076

    申请日：1984-06-25

    申请人： Ilan Golecki

    发明人： Ilan Golecki

    IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/322 ,  H01L21/225 ,  H01L21/263

    CPC分类号： H01L21/3221 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/26506 ,  Y10S148/061 ,  Y10S148/077

    摘要： A silicon on sapphire (SOS) semiconductor structure may be processed to improve the electrical characteristics of a silicon film on a sapphire substrate by silicon-regrowth (SRG) techniques using oxidation to remove silicon from the outward surface of the silicon film. An epitaxial film on a sapphire substrate is implanted with silicon to amorphize the silicon film except for a thin seed layer on the outward surface of the silicon film. The silicon is recrystallized inwards using the seed layer as a seed for crystallization. The silicon film is oxidized to produce an oxide layer on the outward surface of the silicon film, the SOS structure may be heated to densify the oxide layer, and the oxide layer is etched away. This produces a silicon film with a reduced p-type electrical activity and improved crystalline quality surface so that the channel mobility is improved for semiconductor devices fabricated in the silicon film.

    摘要翻译： 可以处理蓝宝石（SOS）半导体结构的硅，以通过使用氧化从硅膜的外表面去除硅的硅再生（SRG）技术改善蓝宝石衬底上的硅膜的电特性。 在硅衬底的外表面上，除了在硅衬底外的薄晶种层之外，在硅衬底上注入硅以将硅膜非晶化。 硅使用种子层作为结晶晶种向内再结晶。 硅膜被氧化以在硅膜的外表面上产生氧化物层，可以加热SOS结构以致密化氧化物层，并且蚀刻掉氧化物层。 这产生具有降低的p型电活动和改进的晶体质量表面的硅膜，使得对于在硅膜中制造的半导体器件的沟道迁移率得到改善。