发明申请
- 专利标题： Shallow trench isolation formation
- 专利标题（中）： 浅沟隔离形成
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申请号： US11445786申请日： 2006-06-02
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公开(公告)号： US20060220148A1公开(公告)日： 2006-10-05
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.
公开/授权文献
- US07348634B2 Shallow trench isolation formation 公开/授权日：2008-03-25
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