- 专利标题: Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
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申请号: US11440116申请日: 2006-05-25
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公开(公告)号: US20060220211A1公开(公告)日: 2006-10-05
- 发明人: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
- 申请人: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2002-366158 20021218
- 主分类号: H01L23/02
- IPC分类号: H01L23/02
摘要:
According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 μm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 μm, preferably at most 2 μm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.
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