发明申请
US20060221680A1 Magnetic random access memory, magnetic random access memory manufacturing method, and magnetic random access memory write method
有权
磁随机存取存储器，磁随机存取存储器制造方法和磁随机存取存储器写入方法
- 专利标题： Magnetic random access memory, magnetic random access memory manufacturing method, and magnetic random access memory write method
- 专利标题（中）： 磁随机存取存储器，磁随机存取存储器制造方法和磁随机存取存储器写入方法
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申请号： US11200105申请日： 2005-08-10
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公开(公告)号： US20060221680A1公开(公告)日： 2006-10-05
- 发明人: Keiji Hosotani
- 申请人： Keiji Hosotani
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-100972 20050331
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
A magnetic random access memory includes first and second write wirings, the second write wiring having first and second crossing angles formed by crossing the first write wiring, a first magnetoresistive element having a first axis of easy magnetization directed to a side of the first crossing angle and having a first recording layer including first and second ferromagnetic layers and a first nonmagnetic layer, and a second magnetoresistive element being electrically connected to the first magnetoresistive element, having a second axis of easy magnetization directed to a side of the second crossing angle, and having a second recording layer including third and fourth ferromagnetic layers and a second nonmagnetic layer, wherein in a write operation, magnetizations in the first and second recording layers execute a toggle operation by using the first and second write wirings.
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