发明申请
- 专利标题： Using a bit specific reference level to read a memory
- 专利标题（中）： 使用特定的参考级别读取内存
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申请号： US11093877申请日： 2005-03-30
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公开(公告)号： US20060221712A1公开(公告)日： 2006-10-05
- 发明人: Tyler Lowrey , Ward Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
- 申请人： Tyler Lowrey , Ward Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
- 主分类号： G11C7/10
- IPC分类号： G11C7/10
摘要：
A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
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