发明申请
US20060222864A1 Method of forming boron-doped and fluorine-doped organosilicate glass films
审中-公开
形成硼掺杂和氟掺杂的有机硅酸盐玻璃膜的方法
- 专利标题： Method of forming boron-doped and fluorine-doped organosilicate glass films
- 专利标题（中）： 形成硼掺杂和氟掺杂的有机硅酸盐玻璃膜的方法
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申请号： US11096596申请日： 2005-03-31
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公开(公告)号： US20060222864A1公开(公告)日： 2006-10-05
- 发明人: George Antonelli , Mandayam Sriram , Michael Goodner
- 申请人： George Antonelli , Mandayam Sriram , Michael Goodner
- 主分类号： B32B9/04
- IPC分类号： B32B9/04 ; B32B13/04
摘要：
An embodiment of the invention is a method of forming a low-k carbon doped oxide dielectric material with improved mechanical properties. An embodiment incorporates a precursor containing a fluorinated organic silane, an alkylborane, or an alkoxyborane with a low-k carbon doped oxide dielectric material precursor during chemical vapor deposition to accomplish the mechanical improvement
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