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发明申请
US20060223000A1 Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method 有权
降低EUV光致抗蚀剂对根据该方法形成的带外辐射和EUV光致抗蚀剂敏感性的方法

  • 专利标题： Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method
  • 专利标题（中）： 降低EUV光致抗蚀剂对根据该方法形成的带外辐射和EUV光致抗蚀剂敏感性的方法
  • 申请号： US11093889
    申请日： 2005-03-29
  • 公开(公告)号： US20060223000A1
    公开(公告)日： 2006-10-05
  • 发明人: Manish Chandhok , Wang Yueh , Heidi Cao
  • 申请人： Manish Chandhok , Wang Yueh , Heidi Cao
  • 专利权人： Intel Corporation
  • 当前专利权人： Intel Corporation
  • 主分类号： G03C1/00
  • IPC分类号： G03C1/00
Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method
摘要：
A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.
摘要（中）：

改进的EUV光致抗蚀剂和制造抗蚀剂的方法。 改性抗蚀剂包括EUV光致抗蚀剂和结合到EUV光致抗蚀剂中的LAM。

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