发明申请
- 专利标题： ATOMIC LAYER DEPOSITION APPARATUS
- 专利标题（中）： 原子层沉积装置
-
申请号： US11423535申请日： 2006-06-12
-
公开(公告)号： US20060223286A1公开(公告)日： 2006-10-05
- 发明人: Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
- 申请人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; H01L21/20
摘要：
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
公开/授权文献
- US07660644B2 Atomic layer deposition apparatus 公开/授权日：2010-02-09
信息查询
IPC分类:
