发明申请
- 专利标题： Nickel silicide including indium and a method of manufacture therefor
- 专利标题（中）： 包括铟的硅化镍及其制造方法
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申请号： US11096660申请日： 2005-04-01
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公开(公告)号： US20060223295A1公开(公告)日： 2006-10-05
- 发明人: Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
- 申请人： Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments, Incorporated
- 当前专利权人： Texas Instruments, Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
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