- 专利标题： Thin film transistor and method of fabricating the same
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申请号： US11397556申请日： 2006-04-05
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公开(公告)号： US20060226424A1公开(公告)日： 2006-10-12
- 发明人: Gee-Sung Chae , Mi-Kyung Park
- 申请人： Gee-Sung Chae , Mi-Kyung Park
- 优先权： KR10-2005-0029120 20050407
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.
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