公开(公告)号：US20120248449A1

公开(公告)日：2012-10-04

申请号：US13495583

申请日：2012-06-13

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/786

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

公开(公告)号：US08426869B2

公开(公告)日：2013-04-23

申请号：US12721124

申请日：2010-03-10

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/336 ,  H01L33/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

摘要： A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

摘要翻译： 薄膜晶体管包括：衬底上的硅纳米线，所述硅纳米线具有中心部分和所述中心部分的两个侧部; 中心部分上的栅电极; 以及源极电极和漏极电极，分别与两个侧部分上的源电极间隔开，源电极和漏电极分别与硅纳米线电连接。

公开(公告)号：US08384075B2

公开(公告)日：2013-02-26

申请号：US13495583

申请日：2012-06-13

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/08

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US08216889B2

公开(公告)日：2012-07-10

申请号：US13240391

申请日：2011-09-22

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US20100163850A1

公开(公告)日：2010-07-01

申请号：US12721124

申请日：2010-03-10

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

摘要： A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

摘要翻译： 薄膜晶体管包括：衬底上的硅纳米线，所述硅纳米线具有中心部分和所述中心部分的两个侧部; 中心部分上的栅电极; 以及源极电极和漏极电极，分别与两个侧部分上的源电极间隔开，源电极和漏电极分别与硅纳米线电连接。

公开(公告)号：US20100133545A1

公开(公告)日：2010-06-03

申请号：US12630164

申请日：2009-12-03

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US07645647B2

公开(公告)日：2010-01-12

申请号：US11397746

申请日：2006-04-04

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US20060226424A1

公开(公告)日：2006-10-12

申请号：US11397556

申请日：2006-04-05

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

摘要： A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

公开(公告)号：US20120009707A1

公开(公告)日：2012-01-12

申请号：US13240391

申请日：2011-09-22

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/336 ,  H01L33/20

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US08044391B2

公开(公告)日：2011-10-25

申请号：US12630164

申请日：2009-12-03

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/08

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。