发明申请
- 专利标题： Lateral bipolar transistor with additional ESD implant
- 专利标题（中）： 具有附加ESD植入物的侧向双极晶体管
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申请号： US11092368申请日： 2005-03-29
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公开(公告)号： US20060226488A1公开(公告)日： 2006-10-12
- 发明人: Jens Schneider , Martin Wendel
- 申请人： Jens Schneider , Martin Wendel
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (12). A second doped region (16) of the second conductivity type is disposed at the upper surface of the semiconductor body (12) and is separated from the first doped region (14) by an isolation region (18). A first contact (26) overlies and is electrically coupled to the first doped region (14) and a second contact (28) overlies and is electrically coupled to the second doped region (16). A third doped region (32) of the first conductivity type is disposed within the semiconductor body (12) beneath the first doped region (14).
公开/授权文献
- US07875933B2 Lateral bipolar transistor with additional ESD implant 公开/授权日：2011-01-25
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