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    Lateral bipolar transistor with additional ESD implant
    2.
    发明申请
    Lateral bipolar transistor with additional ESD implant 有权
    具有附加ESD植入物的侧向双极晶体管

    公开(公告)号：US20060226488A1

    公开(公告)日：2006-10-12

    申请号：US11092368

    申请日：2005-03-29

    申请人： Jens Schneider ,  Martin Wendel

    发明人： Jens Schneider ,  Martin Wendel

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0259 ,  H01L29/1008 ,  H01L29/735

    摘要： A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (12). A second doped region (16) of the second conductivity type is disposed at the upper surface of the semiconductor body (12) and is separated from the first doped region (14) by an isolation region (18). A first contact (26) overlies and is electrically coupled to the first doped region (14) and a second contact (28) overlies and is electrically coupled to the second doped region (16). A third doped region (32) of the first conductivity type is disposed within the semiconductor body (12) beneath the first doped region (14).

    摘要翻译： 半导体器件（10）包括第一导电类型（例如p型）的半导体本体（12）。 在半导体本体（12）的上表面设置有第二导电类型的第一掺杂区（14）（例如，n型）。 第二导电类型的第二掺杂区域（16）设置在半导体本体（12）的上表面处，并且通过隔离区域（18）与第一掺杂区域（14）分离。 第一触点（26）覆盖并电耦合到第一掺杂区域（14），并且第二触点（28）覆盖并电耦合到第二掺杂区域（16）。 第一导电类型的第三掺杂区域（32）设置在第一掺杂区域（14）下面的半导体本体（12）内。

    Lateral Bipolar Transistor with Additional ESD Implant
    3.
    发明申请
    Lateral Bipolar Transistor with Additional ESD Implant 有权
    具有附加ESD植入物的侧向双极晶体管

    公开(公告)号：US20110038085A1

    公开(公告)日：2011-02-17

    申请号：US12912437

    申请日：2010-10-26

    申请人： Jens Schneider ,  Martin Wendel

    发明人： Jens Schneider ,  Martin Wendel

    IPC分类号： H02H9/04 ,  H01L21/761

    CPC分类号： H01L27/0259 ,  H01L29/1008 ,  H01L29/735

    摘要： A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.

    摘要翻译： 公开了一种保护半导体电路免受静电放电的方法。 在节点处接收静电放电。 通过静电放电产生的电流垂直地引导到半导体本体中，横向穿过半导体并且在沟槽隔离区下方，使得电流在平行于半导体本体的上表面的方向上流动到参考电源节点。 参考供应节点形成在设置在半导体主体的上表面上的导电层中。

    ESD/EOS Performance by Introduction of Defects
    4.
    发明申请
    ESD/EOS Performance by Introduction of Defects 有权
    ESD / EOS性能引入缺陷

    公开(公告)号：US20090185316A1

    公开(公告)日：2009-07-23

    申请号：US12017263

    申请日：2008-01-21

    申请人： Jens Schneider ,  Kai Esmark ,  Martin Wendel

    发明人： Jens Schneider ,  Kai Esmark ,  Martin Wendel

    IPC分类号： H02H9/00 ,  H01L29/866 ,  H01L21/329

    CPC分类号： H01L27/0255 ,  H01L21/26506 ,  H01L21/3221 ,  H01L23/62 ,  H01L27/0259 ,  H01L29/0603 ,  H01L29/32 ,  H01L29/66113 ,  H01L29/7302 ,  H01L29/861 ,  H01L29/866 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

    摘要翻译： 本发明涉及可用作ESD保护装置的雪崩二极管。 在二极管的p-n结处形成雪崩点火区域，并且包括增强的缺陷浓度水平以提供雪崩电流的快速起始。 雪崩点火区优选地形成为比二极管耗尽区更宽，并且优选地通过优选通过离子注入放置与主要器件结构不同的原子物种来产生。 放置的原子物种的掺杂浓度应足够高，以确保超过二极管击穿电压时，雪崩电流基本上立即开始。 新的原子物质优选地包括氩或氮，但是可以使用其它原子物质。 然而，也考虑了增加二极管耗尽区中的缺陷浓度水平的其它方法，例如改变的退火程序。

    Avalanche diode having an enhanced defect concentration level and method of making the same
    5.
    发明授权
    Avalanche diode having an enhanced defect concentration level and method of making the same 有权
    具有增强的缺陷浓度水平的雪崩二极管及其制造方法

    公开(公告)号：US08791547B2

    公开(公告)日：2014-07-29

    申请号：US12017263

    申请日：2008-01-21

    申请人： Jens Schneider ,  Kai Esmark ,  Martin Wendel

    发明人： Jens Schneider ,  Kai Esmark ,  Martin Wendel

    IPC分类号： H01L29/861

    CPC分类号： H01L27/0255 ,  H01L21/26506 ,  H01L21/3221 ,  H01L23/62 ,  H01L27/0259 ,  H01L29/0603 ,  H01L29/32 ,  H01L29/66113 ,  H01L29/7302 ,  H01L29/861 ,  H01L29/866 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

    摘要翻译： 本发明涉及可用作ESD保护装置的雪崩二极管。 在二极管的p-n结处形成雪崩点火区域，并且包括增强的缺陷浓度水平以提供雪崩电流的快速起始。 雪崩点火区优选地形成为比二极管耗尽区更宽，并且优选地通过优选通过离子注入放置与主要器件结构不同的原子物种来产生。 放置的原子物种的掺杂浓度应足够高，以确保超过二极管击穿电压时，雪崩电流基本上立即开始。 新的原子物质优选地包括氩或氮，但是可以使用其它原子物质。 然而，也考虑了增加二极管耗尽区中的缺陷浓度水平的其它方法，例如改变的退火程序。

    ESD protection device and method
    6.
    发明申请
    ESD protection device and method 有权
    ESD保护装置及方法

    公开(公告)号：US20070210387A1

    公开(公告)日：2007-09-13

    申请号：US11370369

    申请日：2006-03-08

    申请人： Cornelius Russ ,  David Alvarez ,  Kiran Chatty ,  Jens Schneider ,  Robert Gauthier ,  Martin Wendel

    发明人： Cornelius Russ ,  David Alvarez ,  Kiran Chatty ,  Jens Schneider ,  Robert Gauthier ,  Martin Wendel

    IPC分类号： H01L23/62

    CPC分类号： H01L29/78 ,  H01L29/0626 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/456

    摘要： An ESD protection device includes a source region, a channel region adjacent the source region, and an elongated drain region spaced from the source region by the channel region. The elongated drain region includes an unsilicided portion adjacent the channel and a silicided portion spaced from channel region by the unsilicided portion. A first ESD region is located beneath the silicided portion of the elongated drain region and a second ESD region is located beneath the unsilicided portion of the elongated drain region, the second ESD region being spaced from the first ESD region.

    摘要翻译： ESD保护器件包括源极区域，与源极区域相邻的沟道区域以及由沟道区域与源极区域间隔开的细长漏极区域。 细长的漏极区域包括邻近通道的非硅化部分和通过非硅化部分与沟道区域隔开的硅化部分。 第一ESD区域位于细长漏区域的硅化部分下方，第二ESD区域位于细长漏区域的未硅化部分的下方，第二ESD区域与第一ESD区域间隔开。

    Methods of use and formation of a lateral bipolar transistor with counter-doped implant regions under collector and/or emitter regions
    7.
    发明授权
    Methods of use and formation of a lateral bipolar transistor with counter-doped implant regions under collector and/or emitter regions 有权
    使用和形成在集电极和/或发射极区域下具有反掺杂注入区的横向双极晶体管的方法

    公开(公告)号：US08043934B2

    公开(公告)日：2011-10-25

    申请号：US12912437

    申请日：2010-10-26

    申请人： Jens Schneider ,  Martin Wendel

    发明人： Jens Schneider ,  Martin Wendel

    IPC分类号： H01L21/76

    CPC分类号： H01L27/0259 ,  H01L29/1008 ,  H01L29/735

    摘要： A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.

    摘要翻译： 公开了一种保护半导体电路免受静电放电的方法。 在节点处接收静电放电。 通过静电放电产生的电流垂直地引导到半导体本体中，横向穿过半导体并且在沟槽隔离区下方，使得电流在平行于半导体本体的上表面的方向上流动到参考电源节点。 参考供应节点形成在设置在半导体主体的上表面上的导电层中。

    Lateral bipolar transistor with additional ESD implant
    8.
    发明授权
    Lateral bipolar transistor with additional ESD implant 有权
    具有附加ESD植入物的侧向双极晶体管

    公开(公告)号：US07875933B2

    公开(公告)日：2011-01-25

    申请号：US11092368

    申请日：2005-03-29

    申请人： Jens Schneider ,  Martin Wendel

    发明人： Jens Schneider ,  Martin Wendel

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0259 ,  H01L29/1008 ,  H01L29/735

    摘要： A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (12). A second doped region (16) of the second conductivity type is disposed at the upper surface of the semiconductor body (12) and is separated from the first doped region (14) by an isolation region (18). A first contact (26) overlies and is electrically coupled to the first doped region (14) and a second contact (28) overlies and is electrically coupled to the second doped region (16). A third doped region (32) of the first conductivity type is disposed within the semiconductor body (12) beneath the first doped region (14).

    摘要翻译： 半导体器件（10）包括第一导电类型（例如p型）的半导体本体（12）。 在半导体本体（12）的上表面设置有第二导电类型的第一掺杂区（14）（例如，n型）。 第二导电类型的第二掺杂区域（16）设置在半导体本体（12）的上表面处，并且通过隔离区域（18）与第一掺杂区域（14）分离。 第一触点（26）覆盖并电耦合到第一掺杂区域（14），并且第二触点（28）覆盖并电耦合到第二掺杂区域（16）。 第一导电类型的第三掺杂区域（32）设置在第一掺杂区域（14）下面的半导体本体（12）内。

    METHOD FOR OPERATING A GAS SENSOR ELEMENT AND DEVICE FOR CARRYING OUT SAID METHOD
    9.
    发明申请
    METHOD FOR OPERATING A GAS SENSOR ELEMENT AND DEVICE FOR CARRYING OUT SAID METHOD 有权
    用于操作气体传感器元件的方法和用于执行该方法的装置

    公开(公告)号：US20140157869A1

    公开(公告)日：2014-06-12

    申请号：US14111525

    申请日：2012-02-17

    申请人： Jens Schneider ,  Helge Schichlein ,  Frank Stanglmeier ,  Lothar Diehl ,  Eckart Reihlen

    发明人： Jens Schneider ,  Helge Schichlein ,  Frank Stanglmeier ,  Lothar Diehl ,  Eckart Reihlen

    IPC分类号： G01M15/10

    CPC分类号： G01M15/102 ,  F01N11/00 ,  G01N33/007

    摘要： A method for operating at least one sensor element for detecting at least one property of a gas in a measured-gas space is described. The method comprises at least the following steps: at least one first step, in the first step at least one parameter being ascertained; at least one second step, in the second step the parameter being compared with at least one comparison value, in accordance with that comparison at least one feature being allocated to the sensor element or to at least one part of the sensor element. An apparatus for carrying out the method is also described.

    摘要翻译： 描述了用于操作至少一个用于检测测量气体空间中的气体的特性的传感器元件的方法。 该方法至少包括以下步骤：至少一个第一步骤，在第一步骤中确定至少一个参数; 至少一个第二步骤，在第二步骤中，将参数与至少一个比较值进行比较，根据该比较，将至少一个特征分配给传感器元件或传感器元件的至少一部分。 还描述了用于执行该方法的装置。