发明申请
- 专利标题： Semiconductor laser apparatus
- 专利标题（中）： 半导体激光装置
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申请号： US11397727申请日： 2006-04-05
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公开(公告)号： US20060227831A1公开(公告)日： 2006-10-12
- 发明人: Takehiro Nishida , Tsutomu Yamaguchi , Motoharu Miyashita
- 申请人： Takehiro Nishida , Tsutomu Yamaguchi , Motoharu Miyashita
- 申请人地址： JP Tokyo 100-8310
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo 100-8310
- 优先权： JP2005-112543 20050408; JP2006-015982 20060125
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.
公开/授权文献
- US07260132B2 Semiconductor laser apparatus 公开/授权日：2007-08-21
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