-
公开(公告)号：US20080130697A1
公开(公告)日：2008-06-05
申请号：US11743700
申请日：2007-05-03
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/2201 , H01S5/3211 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser having a ridge structure, comprises a lower cladding layer, an active layer, and an upper cladding layer that are sequentially arranged and supported by a GaAs semiconductor substrate having a misorientation angle of 7 degrees or more. The active layer is AlGaAs. The upper and lower cladding layers are AlGaAsP and the composition ratio of P in the upper and lower cladding layers is higher than 0 and no more than 0.04.
摘要翻译： 具有脊结构的半导体激光器包括由具有7度或更大的取向角的GaAs半导体衬底依次布置和支撑的下包层，有源层和上包层。 有源层是AlGaAs。 上下包层为AlGaAsP，上，下包层的P的组成比高于0且不大于0.04。
-
公开(公告)号：US5822350A
公开(公告)日：1998-10-13
申请号：US711744
申请日：1996-09-10
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/2205 , H01S5/221 , H01S5/2227 , H01S5/3432
摘要： A semiconductor laser includes a ridge structure includes a cladding layer having a thermal expansion coefficient. Current blocking structures are disposed at both sides of the ridge structure and include Al.sub.x Ga.sub.1-x As first current blocking layers having an Al composition x larger than 0.7 and contacting the ridge structure. In this structure, even when the Al composition of the first current blocking layers is reduced at both sides of the ridge structure, the wavelength of light absorbed by the first current blocking layers does not exceed the wavelength of laser light produced in the active layer. Therefore, unwanted absorption of the laser light at both sides of the ridge structure is avoided, resulting in a semiconductor laser with improved laser characteristics.
摘要翻译： 半导体激光器包括具有热膨胀系数的包层的脊结构。 电流阻挡结构设置在脊结构的两侧，并且包括Al x Ga 1-x As具有大于0.7的Al组分x并接触脊结构的第一电流阻挡层。 在该结构中，即使当第一电流阻挡层的Al组成在脊结构的两侧减小时，由第一电流阻挡层吸收的光的波长也不会超过在有源层中产生的激光的波长。 因此，避免了在脊结构的两侧不必要地吸收激光，导致具有改善的激光特性的半导体激光器。
-
公开(公告)号：US5436196A
公开(公告)日：1995-07-25
申请号：US318544
申请日：1994-10-05
申请人： Motoharu Miyashita
发明人： Motoharu Miyashita
CPC分类号： H01S5/164 , H01S5/2231 , H01S5/0202 , H01S5/0203 , H01S5/2081 , H01S5/209 , H01S5/2206 , Y10S148/095
摘要： In a method of fabricating a semiconductor laser, a laminated layer structure including a double heterojunction, having an active layer sandwiched by an upper and a lower cladding layer, is formed on a semiconductor wafer. An insulating film is formed with a pattern including a first to-be-processed region corresponding to respective chip regions including a ridge formation region and a second to-be-processed region corresponding to edge regions of the respective chip regions. Apertures are formed in the insulating film at both sides of the ridge formation region of the laser element at the first to-be-processed region having a large insulating film aperture ratio and at the light emitting facet formation region of the laser element at the second to-be-processed region having a small insulating film aperture ratio. The semiconductor layers exposed through the insulating film apertures are etched with a chemically reactive gas having an increased etching speed at a smaller insulating film aperture ratio. Therefore, the active layer is not exposed at both sides of the ridge and the characteristics of the laser element are not deteriorated due to the deterioration of the semiconductor layer exposed in the etching process.
摘要翻译： 在制造半导体激光器的方法中，在半导体晶片上形成包括具有由上下包层夹持的有源层的双异质结的层叠层结构。 形成绝缘膜，该图案包括对应于与各个芯片区域的边缘区域对应的脊形成区域和第二待处理区域的各个芯片区域对应的第一待处理区域。 在激光元件的脊形成区域的两侧，在绝缘膜开口率大的第一被处理区域和第二激光元件的发光面形成区域处的绝缘膜上形成有孔 要被处理的区域具有小的绝缘膜孔径比。 通过绝缘膜孔露出的半导体层用较小的绝缘膜孔径比用蚀刻速度增加的化学反应气体进行蚀刻。 因此，由于在蚀刻工艺中暴露的半导体层的劣化，有源层不会暴露在脊的两侧，并且激光元件的特性不会劣化。
-
公开(公告)号：US20060227831A1
公开(公告)日：2006-10-12
申请号：US11397727
申请日：2006-04-05
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , G11B7/1275 , G11B2007/0006 , H01S5/2231 , H01S5/4081 , H01S5/4087 , H01S2301/14
摘要： A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.
摘要翻译： 半导体激光装置包括多个发光点，以及用于每个发光点的简单脊条结构。 至少一个发光点设置在基板的宽度方向上的中心的设备宽度的0％至15％的位置。
-
公开(公告)号：US20050069005A1
公开(公告)日：2005-03-31
申请号：US10898196
申请日：2004-07-26
CPC分类号： B82Y20/00 , H01S5/2063 , H01S5/2086 , H01S5/209 , H01S5/2231 , H01S5/34326 , H01S5/34353 , H01S5/4031 , H01S5/4087
摘要： A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
摘要翻译： 一种单片半导体激光器，具有：具有彼此不同的发光波长的多个半导体激光器，包括：半导体基板; 第一双异质结构形成在半导体衬底上的第一区域内，并且具有设置在第一有源层上方和下方的第一覆层; 以及形成在所述半导体衬底上的第二区域内并且具有设置在第二有源层上方和下方的第二覆层的第二双异质结构。 第一和第二有源层由彼此不同的半导体材料制成。 第一有源层之上和之下的第一覆盖层具有大致相同的半导体材料，并且第二有源层上方和下方的第二覆盖层具有大致相同的半导体材料。
-
公开(公告)号：US5903587A
公开(公告)日：1999-05-11
申请号：US37019
申请日：1998-03-09
申请人： Motoharu Miyashita
发明人： Motoharu Miyashita
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313
摘要： A stress compensation type semiconductor laser emitting laser light of 0.98 .mu.m.about.1.02 .mu.m wavelength includes a semiconductor substrate, a cladding layer disposed on the semiconductor substrate, and a multiple quantum well structure active layer disposed on the cladding layer and comprising a plurality of well layers and barrier layers. In the laser, when the number, strain, and thickness of the well layers are n, f.sub.w, and t.sub.w, respectively, and the number, strain, and thickness of the barrier layers are m, f.sub.b, and t.sub.b, respectively, the average strain f.sub.av of the well layers and the barrier layers, and the total thickness t.sub.total of the well layers and the barrier layers is given by ##EQU1## where .upsilon. is the Poisson ratio, b.sub.o is the magnitude of a Burgers vector of a perfect dislocation, b.sub.p is the magnitude of a Burgers vector of partial dislocation, and r.sub.c is the half loop radius of a dislocation. Therefore, an active layer having required stress compensation performance is realized with high reliability and high reproducibility.
摘要翻译： 发射0.98μm差分为1.02μm波长的应力补偿型半导体激光器包括半导体衬底，设置在半导体衬底上的覆层，以及设置在包层上的多量子阱结构有源层，包括多个 阱层和阻挡层。 在激光器中，当阱层的数量，应变和厚度分别为n，fw和tw时，势垒层的数量，应变和厚度分别为m，fb和tb，平均值 阱层和势垒层的应变fav以及阱层和势垒层的总厚度t total给出，其中上升比是泊松比，bo是完美位错的汉堡向量的大小，bp是 部分位错的汉堡矢量的大小，rc是位错的半环半径。 因此，以高可靠性和高再现性实现具有所需应力补偿性能的有源层。
-
公开(公告)号：US07602830B2
公开(公告)日：2009-10-13
申请号：US11878027
申请日：2007-07-20
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/2063 , H01S5/2086 , H01S5/209 , H01S5/2231 , H01S5/34326 , H01S5/34353 , H01S5/4031 , H01S5/4087
摘要： A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
摘要翻译： 一种单片半导体激光器，具有：具有彼此不同的发光波长的多个半导体激光器，包括：半导体基板; 第一双异质结构形成在半导体衬底上的第一区域内，并且具有设置在第一有源层上方和下方的第一覆层; 以及形成在所述半导体衬底上的第二区域内并且具有设置在第二有源层上方和下方的第二覆层的第二双异质结构。 第一和第二有源层由彼此不同的半导体材料制成。 第一有源层之上和之下的第一覆盖层具有大致相同的半导体材料，并且第二有源层上方和下方的第二覆盖层具有大致相同的半导体材料。
-
公开(公告)号：US06414977B1
公开(公告)日：2002-07-02
申请号：US09828218
申请日：2001-04-09
申请人： Motoharu Miyashita , Motoko Sasaki , Ken-ichi Ono
发明人： Motoharu Miyashita , Motoko Sasaki , Ken-ichi Ono
IPC分类号： H01S500
CPC分类号： H01S5/2202 , H01S5/221 , H01S5/2218 , H01S5/2231 , H01S5/32325
摘要： A semiconductor laser device exhibiting a reduced threshold current with less deterioration in temperature properties in current-optical output performance and excellent beam properties. The semiconductor laser device has a current blocking layer of n-AlInP having a stripe-shaped opening disposed on a first upper cladding layer, the first upper cladding layer and the current blocking layer facing the opening respectively are covered by a buffer layer of p-Al0.7Ga0.5As and a second upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P is disposed on the buffer layer, to prevent lattice defect formation during growth of a crystalline layer on the surface of the current blocking layer facing the opening.
摘要翻译： 一种半导体激光器件，具有降低的阈值电流，并且在电流 - 光输出性能和优异的光束性能下具有较低的温度特性劣化。 半导体激光器件具有n-AlInP的电流阻挡层，其具有设置在第一上包层上的条形开口，第一上覆层和面对开口的电流阻挡层分别被p型缓冲层覆盖， Al0.7Ga0.5As和p（Al0.7Ga0.3）0.5In0.5P的第二上包层设置在缓冲层上，以防止在电流阻塞表面上的晶体层生长期间的晶格缺陷形成 层面朝开口。
-
公开(公告)号：US06275515B1
公开(公告)日：2001-08-14
申请号：US09238170
申请日：1999-01-28
IPC分类号： H01S500
CPC分类号： H01L33/30 , H01S5/2231 , H01S5/3235 , H01S5/32358 , H01S5/32383
摘要： A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
摘要翻译： GaAs衬底上的半导体激光器件，其振荡波长为1.3μm或1.55μm，以及制造该激光器件的方法。 激光器件具有与GaAs衬底晶格匹配的BT1GaAs有源层。 为了生长BTlGaAs活性层，使用有机金属气相沉积作为Tl的来源的环戊二烯基铊。
-
公开(公告)号：US5887011A
公开(公告)日：1999-03-23
申请号：US801144
申请日：1997-02-18
CPC分类号： B82Y20/00 , H01S5/2231 , H01S2304/04 , H01S5/2206 , H01S5/3432
摘要： A semiconductor laser includes a first conductivity type GaAs substrate; a AlGaAs double heterojunction structure disposed on the GaAs substrate and including an upper cladding layer having a mesa ridge stripe with a side surface that makes an angle larger than 90.degree. with a front surface of the upper cladding layer; a first current blocking layer of first conductivity type AlGaAs; and a second current blocking layer of first conductivity type AlGaAs, the first and second current blocking layers covering the mesa ridge stripe. The Al compositions of the first and second current blocking layers are larger than that of the upper cladding layer, maintaining an equivalent refractive index of an active region higher than that of other portions of the semiconductor laser. As a result, the differences between the lattice constant of the second current blocking layer and the GaAs substrate or the AlGaAs upper cladding layer are smaller than in prior art semiconductor lasers. Since the second current blocking layer is in the vicinity of the active region in the mesa ridge stripe, stress applied to the active region is reduced, thereby producing a semiconductor laser that facilitates ridge width control and burying layer growth, and with improved reliability.
摘要翻译： 半导体激光器包括第一导电型GaAs衬底; AlGaAs双异质结结构，其设置在所述GaAs衬底上，并且包括具有与所述上包层的前表面成大于90°的侧面的台面脊条的上包层; 第一导电型AlGaAs的第一电流阻挡层; 以及第一导电型AlGaAs的第二电流阻挡层，所述第一和第二电流阻挡层覆盖所述台面脊状条纹。 第一和第二电流阻挡层的Al组成大于上包层的Al组成，保持有源区的等效折射率高于半导体激光器的其它部分的折射率。 结果，第二电流阻挡层和GaAs衬底或AlGaAs上覆层的晶格常数之间的差异比现有技术的半导体激光器小。 由于第二电流阻挡层位于台脊条带中的有源区附近，所以施加到有源区的应力减小，从而产生有利于脊宽度控制和掩埋层生长以及提高可靠性的半导体激光器。
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.012 秒)
