发明申请
- 专利标题： FET DESIGN WITH LONG GATE AND DENSE PITCH
- 专利标题（中）： FET设计与长门和漏洞
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申请号： US10907568申请日： 2005-04-06
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公开(公告)号： US20060228862A1公开(公告)日： 2006-10-12
- 发明人: Brent Anderson , Edward Nowak
- 申请人： Brent Anderson , Edward Nowak
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A complementary metal oxide semiconductor field effect transistor (CMOS FET) design layout and method of fabrication are disclosed that provide a long gate and dense pitch in which gate contacts are positioned directly on top of the gates, and source and drain contacts are made into contact CA bars with contact pads outside the RX (active silicon conductor) region of the FET.