发明申请
US20060234488A1 METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
有权
选择性沉积重金属外延SiGe的方法
- 专利标题： METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
- 专利标题（中）： 选择性沉积重金属外延SiGe的方法
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申请号： US11420906申请日： 2006-05-30
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公开(公告)号： US20060234488A1公开(公告)日： 2006-10-19
- 发明人: Yihwan Kim , Arkadii Samoilov
- 申请人： Yihwan Kim , Arkadii Samoilov
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
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