发明申请
- 专利标题： Power semiconductor device with L-shaped source region
- 专利标题（中）： 功率半导体器件具有L形源极区域
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申请号： US11194353申请日： 2005-08-01
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公开(公告)号： US20060237782A1公开(公告)日： 2006-10-26
- 发明人: Jun Zeng , Po-I Sun
- 申请人： Jun Zeng , Po-I Sun
- 专利权人： Pyramis Corporation
- 当前专利权人： Pyramis Corporation
- 优先权： TW094112760 20050421
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A power semiconductor device includes a substrate, a well region, a body region, a trench gate, a gate oxide layer, an L-shaped source region, an inter-layer dielectric layer and a metal layer. The body region is formed on the well region. The trench gate is formed at bilateral sides of the well region. The gate oxide layer is formed on sidewall and bottom of the trench gate. The L-shaped source region has a horizontal portion and a vertical portion formed on a portion of top region and bilateral sides of the body region, respectively. The inter-layer dielectric layer is formed on the trench gate and a portion of the L-shaped source region, thereby defining a contact window therein. The metal layer is formed on the inter-layer dielectric layer, the body region and the L-shaped source region, and connected to the L-shaped source region via the contact window.
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