发明申请
- 专利标题： Magnetoresistive element and method of manufacturing same, magnetoresistive device, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive
- 专利标题（中）： 磁阻元件及其制造方法，磁阻器件，薄膜磁头，头万向架组件，头臂组件和磁盘驱动器
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申请号： US11391278申请日： 2006-03-29
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公开(公告)号： US20060240289A1公开(公告)日： 2006-10-26
- 发明人: Tomohito Mizuno , Daisuke Miyauchi
- 申请人： Tomohito Mizuno , Daisuke Miyauchi
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-106999 20050404
- 主分类号： G11B5/33
- IPC分类号： G11B5/33 ; G11B5/127
摘要：
A free layer of an MR element incorporates a first layer, a second layer, a third layer, a fourth layer, a fifth layer and a sixth layer that are stacked in this order on a nonmagnetic conductive layer. The absolute value of magnetostriction constant of the free layer is 1×10−6 or smaller. The coercivity of the free layer is 20×79.6 A/m or smaller. The first layer is made of an alloy containing ‘a’ atomic percent cobalt and (100−a) atomic percent iron wherein ‘a’ falls within a range of 20 to 50 inclusive. The second layer is made of an alloy containing ‘b’ atomic percent cobalt and (100−b) atomic percent iron wherein ‘b’ falls within a range of 70 to 90 inclusive. In addition, oxidation treatment is given to a surface of the second layer farther from the first layer.
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