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    Magnetoresistive element including insulating film touching periphery of spacer layer
    3.
    发明授权
    Magnetoresistive element including insulating film touching periphery of spacer layer 有权
    磁阻元件包括接触间隔层周边的绝缘膜

    公开(公告)号：US07916431B2

    公开(公告)日：2011-03-29

    申请号：US11892771

    申请日：2007-08-27

    申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/39 ,  G11B5/31

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996

    摘要： An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more.

    摘要翻译： MR元件包括一叠层，包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层。 层叠层具有外表面，并且间隔层具有位于层叠层的外表面中的周边。 磁阻元件还包括接触间隔层的周边的绝缘膜。 间隔层包括由第一金属的氧化物构成的氧化物半导体层。 绝缘膜包括接触间隔层的周边的接触膜，并且由具有低于第一金属的Pauling电负性的第二金属的氧化物制成的接触膜为0.1以上。

    Magneto-resistive element having a cap layer for canceling spin injection effect
    4.
    发明授权
    Magneto-resistive element having a cap layer for canceling spin injection effect 有权
    具有用于消除自旋注入效果的盖层的磁阻元件

    公开(公告)号：US07656621B2

    公开(公告)日：2010-02-02

    申请号：US11581478

    申请日：2006-10-17

    申请人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    发明人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996

    摘要： A magneto-resistive element has: a first stacked film assembly having a pinned layer, a spacer layer, and a free layer; a first electrode layer which is arranged such that the first layer is in contact with the first electrode layer on the other side of the first layer, the first electrode layer being made of a ferromagnetic material; and a second electrode layer which is arranged on a side that is opposite to the first electrode layer with regard to the first stacked film assembly. The first and second electrode layers are adapted to apply a sense current to the first stacked film assembly and the first layer in a direction that is perpendicular to layer surfaces. The first layer is made of gold, silver, copper, ruthenium, rhodium, iridium, chromium or platinum, or an alloy thereof.

    摘要翻译： 磁阻元件具有：具有钉扎层，间隔层和自由层的第一层叠膜组件; 第一电极层，被布置成使得第一层与第一层的另一侧上的第一电极层接触，第一电极层由铁磁材料制成; 以及相对于第一层叠膜组件布置在与第一电极层相对的一侧的第二电极层。 第一和第二电极层适于在垂直于层表面的方向上向第一堆叠膜组件和第一层施加感测电流。 第一层由金，银，铜，钌，铑，铱，铬或铂或其合金制成。

    Magnetoresistive device, thin film magnetic head, head gimbal assembly, head arm assembly, magnetic disk apparatus, synthetic antiferromagnetic magnetization pinned layer, magnetic memory cell, and current sensor
    6.
    发明授权
    Magnetoresistive device, thin film magnetic head, head gimbal assembly, head arm assembly, magnetic disk apparatus, synthetic antiferromagnetic magnetization pinned layer, magnetic memory cell, and current sensor 有权
    磁阻装置，薄膜​​磁头，头万向架组件，头臂组件，磁盘装置，合成反铁磁磁化固定层，磁存储单元和电流传感器

    公开(公告)号：US07609490B2

    公开(公告)日：2009-10-27

    申请号：US11490112

    申请日：2006-07-21

    申请人： Tomohito Mizuno ,  Daisuke Miyauchi

    发明人： Tomohito Mizuno ,  Daisuke Miyauchi

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16

    摘要： An MR device includes a magnetization pinned film having a nonmagnetic intermediate layer positioned on the opposite side of a magnetization free layer while sandwiching a nonmagnetic spacer layer and made of RuCu. In the case of passing read current in the stacking direction via lower and upper electrodes, decrease in a resistance change amount caused by a second magnetization pinned layer can be suppressed. Further, a first magnetization pinned layer and the second magnetization pined layer which are thicker can be antiferromagnetically coupled to each other in magnetic fields in a wider range. Thus, both increase in the resistance change amount and magnetic field stability can be achieved. Therefore, while maintaining stable operations by reducing the influence of external noise, the invention can address higher recording density by the increase in the resistance change amount as a whole.

    摘要翻译： MR装置包括具有位于无磁化层的相对侧上的非磁性中间层的磁化固定膜，同时夹着非磁性间隔层并由RuCu制成。 在通过下电极和上电极在层叠方向上传递读取电流的情况下，可以抑制由第二磁化固定层引起的电阻变化量的降低。 此外，较厚的第一磁化固定层和第二磁化层可以在更宽范围内的磁场中彼此反铁磁耦合。 因此，可以实现电阻变化量和磁场稳定性的增加。 因此，通过减少外部噪声的影响来保持稳定的动作，本发明能够通过整体上的电阻变化量的增加来解决更高的记录密度。

    Magnetoresistive device, thin film magnetic head, head gimbal assembly and magnetic disk unit
    7.
    发明申请
    Magnetoresistive device, thin film magnetic head, head gimbal assembly and magnetic disk unit 有权
    磁阻装置，薄膜​​磁头，磁头万向架组件和磁盘装置

    公开(公告)号：US20050213262A1

    公开(公告)日：2005-09-29

    申请号：US11076966

    申请日：2005-03-11

    申请人： Daisuke Miyauchi ,  Tomohito Mizuno

    发明人： Daisuke Miyauchi ,  Tomohito Mizuno

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： Provided are a magnetoresistive device capable of obtaining a larger amount of resistance change and responding to a higher recording density and a thin film magnetic head comprising the magnetoresistive device. A first magnetization fixed film and a second magnetization fixed film have magnetization directions antiparallel to each other, and the second magnetization fixed film farther from a magnetization free layer is made of, for example, a material including at least one selected from the group consisting of tantalum (Ta), chromium (Cr) and vanadium (V), and has a bulk scattering coefficient of 0.25 or less. Thereby, a bulk scattering effect by the second magnetization fixed film which has a function of canceling out the amount of resistance change between the magnetization free layer and the first magnetization fixed film can be prevented, and a magnetoresistive ratio ΔR/R can be improved, and recorded magnetic information with a higher recording density can be read out.

    摘要翻译： 提供了能够获得更大量的电阻变化并响应较高记录密度的磁阻器件和包括磁阻器件的薄膜磁头。 第一磁化固定膜和第二磁化固定膜具有彼此反平行的磁化方向，并且远离磁化自由层的第二磁化固定膜例如由包括选自以下的至少一种的材料制成： 钽（Ta），铬（Cr）和钒（V），体积散射系数为0.25以下。 因此，可以防止具有消除磁化自由层和第一磁化固定膜之间的电阻变化量的功能的第二磁化固定膜的体散射效应，并且可以提高磁阻比ΔR/ R， 并且可以读出具有较高记录密度的记录磁信息。

    Magnetoresistive sensor having cobalt-iron alloy layer in free layer
    8.
    发明申请
    Magnetoresistive sensor having cobalt-iron alloy layer in free layer 有权
    磁阻传感器在自由层中具有钴 - 铁合金层

    公开(公告)号：US20050168888A1

    公开(公告)日：2005-08-04

    申请号：US11043118

    申请日：2005-01-27

    申请人： Daisuke Miyauchi ,  Tomohito Mizuno

    发明人： Daisuke Miyauchi ,  Tomohito Mizuno

    IPC分类号： G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A magnetoresistive sensor comprises a pinned layer having a magnetization direction fixed with respect to an external magnetic field, a free layer, having a magnetization direction variable in accordance with the external magnetic field, and a spacer layer mainly containing copper, sandwiched between the pinned layer and the free layer. A sense current flows through the pinned layer, the spacer layer, and the free layer substantially in a direction in which the layers are stacked. The free layer comprises at least one intermediate stack composed of a non-magnetic layer mainly containing copper, and a first cobalt iron layers made of a cobalt iron alloy and disposed on boundaries on both sides of the non-magnetic layer, a nickel iron alloy layers disposed on boundaries on both sides of the intermediate stack, and a second cobalt iron layer made of a cobalt iron alloy and formed in contact with the spacer layer on a boundary, opposing the spacer layer, of a stack composed of the intermediate stack and the nickel iron alloy layer.

    摘要翻译： 磁阻传感器包括相对于外部磁场具有固定磁化方向的固定层，具有根据外部磁场可变化的磁化方向的自由层和主要包含铜的间隔层，该间隔层夹在被钉扎层 和自由层。 检测电流基本上沿堆叠层的方向流过被钉扎层，间隔层和自由层。 自由层包括由主要包含铜的非磁性层和由钴铁合金制成并设置在非磁性层两侧的边界上的第一钴铁层构成的至少一个中间叠层，镍铁合金 设置在中间堆叠的两侧的边界上的层和由钴铁合金制成的第二钴铁层，并且形成为与间隔层相对的间隔层与间隔层相对的由中间堆叠构成的堆叠和 镍铁合金层。

    Magnetoresistive element including layered film touching periphery of spacer layer
    9.
    发明申请
    Magnetoresistive element including layered film touching periphery of spacer layer 有权
    磁阻元件包括层间膜接触间隔层的周边

    公开(公告)号：US20090067099A1

    公开(公告)日：2009-03-12

    申请号：US11898335

    申请日：2007-09-11

    申请人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

    摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。 磁阻元件还包括接触间隔层的周边的层状膜。 间隔层包括使用氧化物半导体作为材料形成的半导体层。 层叠膜包括依次堆叠的第一层，第二层和第三层。 第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。 第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。 第三层是绝缘层。

    Magnetoresistive element including insulating film touching periphery of spacer layer
    10.
    发明申请
    Magnetoresistive element including insulating film touching periphery of spacer layer 有权
    磁阻元件包括接触间隔层周边的绝缘膜

    公开(公告)号：US20090059443A1

    公开(公告)日：2009-03-05

    申请号：US11892771

    申请日：2007-08-27

    申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996

    摘要： An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more.

    摘要翻译： MR元件包括一叠层，包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层。 层叠层具有外表面，并且间隔层具有位于层叠层的外表面中的周边。 磁阻元件还包括接触间隔层的周边的绝缘膜。 间隔层包括由第一金属的氧化物构成的氧化物半导体层。 绝缘膜包括接触间隔层的周边的接触膜，并且由具有低于第一金属的Pauling电负性的第二金属的氧化物制成的接触膜为0.1以上。