发明申请
US20060243702A1 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device
有权
用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
- 专利标题： CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device
- 专利标题（中）： 用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
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申请号： US11340494申请日： 2006-01-27
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公开(公告)号： US20060243702A1公开(公告)日： 2006-11-02
- 发明人: Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
- 申请人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
- 优先权： JP2005-132095 20050428
- 主分类号： C09K13/00
- IPC分类号： C09K13/00 ; H01L21/461 ; B44C1/22 ; H01L21/302
摘要：
A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
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