发明申请
US20060243915A1 Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus
审中-公开
半导体辐射检测器,正电子发射断层摄影装置,半导体辐射检测装置,检测器单元和核医学诊断装置
- 专利标题: Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus
- 专利标题(中): 半导体辐射检测器,正电子发射断层摄影装置,半导体辐射检测装置,检测器单元和核医学诊断装置
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申请号: US11435134申请日: 2006-05-17
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公开(公告)号: US20060243915A1公开(公告)日: 2006-11-02
- 发明人: Kensuke Amemiya , Yuuichirou Ueno , Hiroshi Kitaguchi , Osamu Yokomizo , Shinichi Kojima , Katsutoshi Tsuchiya , Norihito Yanagita , Kazuma Yokoi
- 申请人: Kensuke Amemiya , Yuuichirou Ueno , Hiroshi Kitaguchi , Osamu Yokomizo , Shinichi Kojima , Katsutoshi Tsuchiya , Norihito Yanagita , Kazuma Yokoi
- 优先权: JP2003/340688 20030930
- 主分类号: G01T1/166
- IPC分类号: G01T1/166
摘要:
Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).
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