公开(公告)号：US20060243915A1

公开(公告)日：2006-11-02

申请号：US11435134

申请日：2006-05-17

申请人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

发明人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

IPC分类号： G01T1/166

CPC分类号： G01T1/2928 ,  G01T1/2985

摘要： Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

摘要翻译： 用于核医学诊断装置（PET装置）的每个半导体辐射检测器被构造成具有面向通过与γ射线相互作用产生电荷的CdTe半导体部件S的阴极电极C的阳极电极A. 然后，将夹在这些相互相对的阳极电极A和阴极电极C之间的半导体部件S的厚度t设定为0.2〜2mm。 此外，这些装置以这样的方式安装（布置）在基板上，使得半导体辐射检测器和处理由该检测器检测到的信号的模拟ASIC之间的距离（导体的距离）缩短。 此外，安装有检测器的基板作为一个单元容纳在壳体中（检测器单元）。

公开(公告)号：US20050178969A1

公开(公告)日：2005-08-18

申请号：US11102795

申请日：2005-04-11

申请人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

发明人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

IPC分类号： G01T1/24 ,  G01J1/00 ,  G01T1/161 ,  G01T1/164 ,  G01T1/166 ,  G01T1/29 ,  H01L27/14 ,  H01L31/09

CPC分类号： G01T1/2928 ,  G01T1/2985

摘要： Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

公开(公告)号：US20050067572A1

公开(公告)日：2005-03-31

申请号：US10874343

申请日：2004-06-24

申请人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

发明人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

IPC分类号： G01T1/24 ,  G01J1/00 ,  G01T1/161 ,  G01T1/164 ,  G01T1/166 ,  G01T1/29 ,  H01L27/14 ,  H01L31/09

CPC分类号： G01T1/2928 ,  G01T1/2985

摘要： Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

摘要翻译： 用于核医学诊断装置（PET装置）的每个半导体辐射检测器被构造成具有面向通过与γ射线相互作用产生电荷的CdTe半导体部件S的阴极电极C的阳极电极A. 然后，将夹在这些相互相对的阳极电极A和阴极电极C之间的半导体部件S的厚度t设定为0.2〜2mm。 此外，这些装置以这样的方式安装（布置）在基板上，使得半导体辐射检测器和处理由该检测器检测到的信号的模拟ASIC之间的距离（导体的距离）缩短。 此外，安装有检测器的基板作为一个单元容纳在壳体中（检测器单元）。

公开(公告)号：US07297955B2

公开(公告)日：2007-11-20

申请号：US10874343

申请日：2004-06-24

申请人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

发明人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

IPC分类号： G01T1/166

CPC分类号： G01T1/2928 ,  G01T1/2985

摘要： Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

摘要翻译： 用于核医学诊断装置（PET装置）的每个半导体辐射检测器被构造成具有面向通过与γ射线相互作用产生电荷的CdTe半导体部件S的阴极电极C的阳极电极A. 然后，将夹在这些相互相对的阳极电极A和阴极电极C之间的半导体部件S的厚度t设定为0.2〜2mm。 此外，这些装置以这样的方式安装（布置）在基板上，使得半导体辐射检测器和处理由该检测器检测到的信号的模拟ASIC之间的距离（导体的距离）被缩短。 此外，安装有检测器的基板作为一个单元容纳在壳体中（检测器单元）。

公开(公告)号：US20050199816A1

公开(公告)日：2005-09-15

申请号：US11102704

申请日：2005-04-11

申请人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

发明人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

IPC分类号： G01T1/24 ,  G01J1/00 ,  G01T1/161 ,  G01T1/164 ,  G01T1/166 ,  G01T1/29 ,  H01L27/14 ,  H01L31/09

CPC分类号： G01T1/2928 ,  G01T1/2985

摘要： Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

公开(公告)号：US20050178970A1

公开(公告)日：2005-08-18

申请号：US11102810

申请日：2005-04-11

申请人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

发明人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

IPC分类号： G01T1/24 ,  G01J1/00 ,  G01T1/161 ,  G01T1/164 ,  G01T1/166 ,  G01T1/29 ,  H01L27/14 ,  H01L31/09

CPC分类号： G01T1/2928 ,  G01T1/2985

摘要： Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

公开(公告)号：US20050167600A1

公开(公告)日：2005-08-04

申请号：US11098554

申请日：2005-04-05

申请人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

发明人： Kensuke Amemiya ,  Yuuichirou Ueno ,  Hiroshi Kitaguchi ,  Osamu Yokomizo ,  Shinichi Kojima ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Kazuma Yokoi

IPC分类号： G01T1/24 ,  G01J1/00 ,  G01T1/161 ,  G01T1/164 ,  G01T1/166 ,  G01T1/29 ,  H01L27/14 ,  H01L31/09

CPC分类号： G01T1/2928 ,  G01T1/2985

摘要： Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

公开(公告)号：US20070278414A1

公开(公告)日：2007-12-06

申请号：US11705595

申请日：2007-02-13

申请人： Kazuma Yokoi ,  Hiroshi Kitaguchi ,  Takafumi Ishitsu ,  Kensuke Amemiya ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima

发明人： Kazuma Yokoi ,  Hiroshi Kitaguchi ,  Takafumi Ishitsu ,  Kensuke Amemiya ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima

IPC分类号： G01T1/24

CPC分类号： G01T1/2018 ,  G01T1/2928

摘要： The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.

公开(公告)号：US20060192127A1

公开(公告)日：2006-08-31

申请号：US11405626

申请日：2006-04-18

申请人： Norihito Yanagita ,  Yuuichirou Ueno ,  Kensuke Amemiya ,  Hiroshi Kitaguchi ,  Katsutoshi Tsuchiya ,  Shinichi Kojima ,  Kazuma Yokoi ,  Takafumi Ishitsu

发明人： Norihito Yanagita ,  Yuuichirou Ueno ,  Kensuke Amemiya ,  Hiroshi Kitaguchi ,  Katsutoshi Tsuchiya ,  Shinichi Kojima ,  Kazuma Yokoi ,  Takafumi Ishitsu

IPC分类号： G01T1/164

CPC分类号： G01T1/172

摘要： A γ-ray signal processing section 60′ determines a detection time of a γ ray based on a α-ray detection signal outputted from a semiconductor radiation detector for detecting the γ ray, and determines the energy of the γ ray. Then, a time correction circuit 70 obtains, based on the energy of the γ ray, a detection value of the detection time that corresponds to the energy of the γ ray from a time correction table indicating the relationship between the energy of the γ ray and the correction value of the detection time of the γ ray, and corrects the detection time according to the obtained correction value of the detection time. Coincidence counting is performed on the γ ray in a coincidence counting circuit 80 based on the corrected detection time.

摘要翻译： 伽马射线信号处理部60'基于从用于检测伽马射线的半导体辐射检测器输出的α射线检测信号来确定伽马射线的检测时间，并且确定伽马射线的能量。 然后，时间校正电路70根据伽马射线的能量，从表示伽马射线的能量与γ射线的能量的关系的时刻校正表，求出与γ射线的能量对应的检测时间的检测值 伽马射线的检测时间的校正值，并根据获得的检测时间的校正值来校正检测时间。 基于校正的检测时间，在重合计数电路80中对伽马射线进行一致性计数。

公开(公告)号：US20050067574A1

公开(公告)日：2005-03-31

申请号：US10950652

申请日：2004-09-28

申请人： Kazuma Yokoi ,  Hiroshi Kitaguchi ,  Takafumi Ishitsu ,  Kensuke Amemiya ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima

发明人： Kazuma Yokoi ,  Hiroshi Kitaguchi ,  Takafumi Ishitsu ,  Kensuke Amemiya ,  Yuuichirou Ueno ,  Katsutoshi Tsuchiya ,  Norihito Yanagita ,  Shinichi Kojima

IPC分类号： G01T1/161 ,  G01T1/20 ,  G01T1/24 ,  G01T1/29 ,  H01L27/14 ,  H01L31/09

CPC分类号： G01T1/2018 ,  G01T1/2928

摘要： The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.

摘要翻译： 半导体放射检测器1使从电极引出的信号线引起的死空间最小化，并且允许多个半导体器件被密集地布置以提高灵敏度和空间分辨率。 半导体放射线检测器1包括半导体器件2，安装在半导体器件2的一个表面上的阳极3和附着到半导体器件2的另一个表面的阴极4.信号线5设置在阳极3上; 信号线5从阳极3直线延伸并连接到X轴线12.另一个信号线13设置在阴极4上; 信号线13从阴极4直线延伸并连接到Y轴线14。