发明申请
- 专利标题： ASYMMETRIC FIELD EFFECT TRANSISTORS (FETs)
- 专利标题（中）： 非对称场效应晶体管（FET）
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申请号： US10908095申请日： 2005-04-27
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公开(公告)号： US20060244077A1公开(公告)日： 2006-11-02
- 发明人: Edward Nowak
- 申请人： Edward Nowak
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical contact with the semiconductor source block, wherein the source contact region comprises a first electrically conducting material, and wherein the semiconductor source block physically isolates the source contact region from the semiconductor channel region, and (d) a drain contact region in direct physical contact with the semiconductor channel region, wherein the semiconductor channel region is disposed between the semiconductor source block and the drain contact region, and wherein the drain contact region comprises a second electrically conducting material; and (e) a gate stack in direct physical contact with the semiconductor channel region.
公开/授权文献
- US07329937B2 Asymmetric field effect transistors (FETs) 公开/授权日：2008-02-12
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