发明申请
US20060246641A1 Technique for forming a contact insulation layer with enhanced stress transfer efficiency
有权
用于形成具有增强的应力传递效率的接触绝缘层的技术
- 专利标题： Technique for forming a contact insulation layer with enhanced stress transfer efficiency
- 专利标题（中）： 用于形成具有增强的应力传递效率的接触绝缘层的技术
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申请号： US11288673申请日： 2005-11-29
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公开(公告)号： US20060246641A1公开(公告)日： 2006-11-02
- 发明人: Thorsten Kammler , Andy Wei , Markus Lenski
- 申请人： Thorsten Kammler , Andy Wei , Markus Lenski
- 优先权： DE102005020133.4 20050429
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
By removing an outer spacer, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, a high degree of process compatibility with conventional processes is obtained, while at the same time a contact liner layer may be positioned more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region.
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