发明申请
US20060246734A1 Methods of forming patterned photoresist layers over semiconductor substrates
有权
在半导体衬底上形成图案化光致抗蚀剂层的方法
- 专利标题： Methods of forming patterned photoresist layers over semiconductor substrates
- 专利标题（中）： 在半导体衬底上形成图案化光致抗蚀剂层的方法
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申请号： US11477287申请日： 2006-06-28
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公开(公告)号： US20060246734A1公开(公告)日： 2006-11-02
- 发明人: Guy Blalock , Gurtej Sandhu , Jon Daley
- 申请人： Guy Blalock , Gurtej Sandhu , Jon Daley
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/31 ; H01L21/4763 ; G03C5/00
摘要：
This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the fluid therein. The positive photoresist is patterned and developed to form a patterned photoresist layer, with the fluid within the pores being effective to reduce photoresist footing in the patterned photoresist layer than would otherwise occur in the absence of the fluid within the pores. Other aspects and implementations are contemplated.
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