- 专利标题: Solid-state imaging device and method of manufacturing said solid-state imaging device
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申请号: US11404902申请日: 2006-04-17
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公开(公告)号: US20060252175A1公开(公告)日: 2006-11-09
- 发明人: Hiroshi Maeda , Kazuhiro Nishida , Yoshihisa Negishi , Shunichi Hosaka
- 申请人: Hiroshi Maeda , Kazuhiro Nishida , Yoshihisa Negishi , Shunichi Hosaka
- 优先权: JPP.2002-119262 20020422; JPP.2002-154528 20020528; JPP.2002-183072 20020624; JPP.2002-219645 20020729; JPP.2002-219791 20020729
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plurality of IT-CCDs on a surface of a semiconductor substrate, bonding a translucent member to the surface of the semiconductor substrate in order to have a gap opposite to each light receiving region of the IT-CCD, and isolating a bonded member obtained at the bonding step for each of the IT-CCDs.
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