发明申请
- 专利标题: Catalyst enhanced chemical vapor deposition apparatus
- 专利标题(中): 催化剂增强化学气相沉积装置
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申请号: US11413927申请日: 2006-04-28
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公开(公告)号: US20060254514A1公开(公告)日: 2006-11-16
- 发明人: Hee Kang , Kazuo Furuno , Han Kim , Myoung Kim
- 申请人: Hee Kang , Kazuo Furuno , Han Kim , Myoung Kim
- 优先权: KR2005-39535 20050511
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A catalyst enhanced chemical vapor deposition (CECVD) apparatus is provided in which the showerhead and catalyst support are separated from each other. The CECVD apparatus has excellent spacing between the showerhead, catalyst wire and substrate and can be purged to prevent contaminants from forming on parts functioning at low temperatures. The CECVD apparatus comprises a reaction chamber, a showerhead for introducing reaction gas into the reaction chamber, a catalyst wire for decomposing the reaction gas, a catalyst support for supporting the catalyst wire, a substrate on which the decomposed gas is deposited, and a substrate support for supporting the substrate.
公开/授权文献
- US07942968B2 Catalyst enhanced chemical vapor deposition apparatus 公开/授权日:2011-05-17
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