发明申请
- 专利标题： Manufacturing process and structure of power junction field effect transistor
- 专利标题（中）： 功率结场效应晶体管的制造工艺和结构
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申请号： US11194354申请日： 2005-08-01
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公开(公告)号： US20060255374A1公开(公告)日： 2006-11-16
- 发明人: Jun Zeng , Po-I Sun
- 申请人： Jun Zeng , Po-I Sun
- 专利权人： Pyramis Corporation
- 当前专利权人： Pyramis Corporation
- 优先权： TW094115660 20050513
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A manufacturing process and a power junction field-effect transistor (JFET) are provided. The basic concept of the present invention is to allow the current to flow vertically from the drain region on the bottom side to the source region on the topside of the device. By regulating the voltage applied between the gate regions and the source region, the power junction field-effect transistor (JFET) of the present invention can be built to handle large current and higher voltage for power management purposes, as is similar to the metal oxide semiconductor field effect transistor (MOSFET).
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