发明申请
- 专利标题： Flash memory device and method of manufacturing the same
- 专利标题（中）： 闪存装置及其制造方法
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申请号： US11169893申请日： 2005-06-30
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公开(公告)号： US20060255394A1公开(公告)日： 2006-11-16
- 发明人: Sung Park
- 申请人： Sung Park
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 优先权： KR2005-39445 20050511
- 主分类号： H01L21/8236
- IPC分类号： H01L21/8236 ; H01L29/76
摘要：
A flash memory device and method of manufacturing the same. The flash memory device includes a semiconductor substrate in which a first region where a cell region is formed, a second region where a peripheral region is formed, and a third region formed in the peripheral region at the boundary portion of the cell region and the peripheral region. The device also includes a triple well region formed in the first region and a predetermined region of the third region, an isolation film formed in the first region and having a first depth, an isolation film formed in the second region and having a second depth, which is deeper than the first depth of the isolation film, and a gate oxide film for low voltage and a floating gate, which are stacked on a predetermined region of the first region, a gate oxide film and a gate, which are stacked on a predetermined region of the second region. Additionally, the device includes a dummy flash memory cell in which the floating gate formed in the first region and the gate formed in the second region are separated from each other, and a gate oxide film for high voltage and a gate electrode are stacked on a predetermined region of the third region.
公开/授权文献
- US07183174B2 Flash memory device and method of manufacturing the same 公开/授权日：2007-02-27
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