发明申请
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
-
申请号： US11409275申请日： 2006-04-24
-
公开(公告)号： US20060255407A1公开(公告)日： 2006-11-16
- 发明人: Hiroyasu Ishida
- 申请人： Hiroyasu Ishida
- 优先权： JP2005-130762 20050428
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
In a peripheral insulating film in a peripheral region, concave parts are provided. At least one of the concave parts is made to have an opening as a contact hole with an Al wiring layer, and a plurality of contact holes may be provided. Accordingly, frictions between the Al wiring layer and the peripheral insulating film are increased. Thus, occurrence of Al slide can be suppressed.
信息查询
IPC分类:
