发明申请
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US11488024申请日: 2006-07-18
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公开(公告)号: US20060256642A1公开(公告)日: 2006-11-16
- 发明人: Hitoshi Ikeda , Shinya Fujioka , Takahiro Sawamura
- 申请人: Hitoshi Ikeda , Shinya Fujioka , Takahiro Sawamura
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
A word control circuit activates word lines corresponding to a start row address and a next row address overlapping in the continuous mode. Accordingly, even in the case where the start address indicates an end memory cell connected to a word line, the switching operation of the word lines can be thus accessed in a sequential manner. That is, a controller accessing a semiconductor memory device can access the memory without data interruption. This can prevent the data transfer rate from lowering. Furthermore, it is made unnecessary to form a signal and control circuit for informing a controller of the fact that a word line is being switched so that the construction of a semiconductor memory device and a control circuit of the controller can be simplified. This results in reduction of the system cost.
公开/授权文献
- US07570541B2 Semiconductor memory device 公开/授权日:2009-08-04