发明申请
US20060261419A1 Method for fabricating a nanoelement field effect transistor with surrounded gate structure
失效
制造具有包围栅极结构的纳米元素场效应晶体管的方法
- 专利标题： Method for fabricating a nanoelement field effect transistor with surrounded gate structure
- 专利标题（中）： 制造具有包围栅极结构的纳米元素场效应晶体管的方法
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申请号： US11482493申请日： 2006-07-07
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公开(公告)号： US20060261419A1公开(公告)日： 2006-11-23
- 发明人: Franz Kreupl , Robert Seidel
- 申请人： Franz Kreupl , Robert Seidel
- 优先权： DE102004001340.3 20040108
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/336
摘要：
The invention relates to a method for the production of a nanoelement field effect transistor, a nanoelement field effect transistor and a nanoelement arrangement. According to the method for the production of a nanoelement field effect transistor, a nanoelement is formed, a first and a second source-/drain area is coupled to the nanoelement, a surface area of a substrate is removed, such that a region of the nanoelement is exposed, and a gate-insulating structure and a gate structure are formed in a covered manner fully encompassing the nanoelement.
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