- 专利标题： Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
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申请号： US11435129申请日： 2006-05-17
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公开(公告)号： US20060264011A1公开(公告)日： 2006-11-23
- 发明人: Akihiro Hachigo , Takayuki Nishiura
- 申请人： Akihiro Hachigo , Takayuki Nishiura
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 优先权： JP2005-144101(P) 20050517; JP2006-060999(P) 20060307
- 主分类号： C23G1/00
- IPC分类号： C23G1/00 ; B08B3/00 ; H01L21/20
摘要：
There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.
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