发明申请
- 专利标题: Metal oxide sensors and method of forming
- 专利标题(中): 金属氧化物传感器及成型方法
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申请号: US11136585申请日: 2005-05-25
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公开(公告)号: US20060267051A1公开(公告)日: 2006-11-30
- 发明人: Florian Gstrein , Valery Dubin
- 申请人: Florian Gstrein , Valery Dubin
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 主分类号: H01L29/15
- IPC分类号: H01L29/15
摘要:
A metal oxide sensor is provided on a semiconductor substrate to provide on-chip sensing of gases. The sensor may include a metal layer that may have pores formed by lithography to be of a certain width. The top metal layer may be oxidized resulting in a narrowing of the pores. Another metal layer may be formed over the oxidized layer and electrical contacts may be formed on the metal layer. The contacts may be coupled to a monitoring system that receives electrical signals indicative of gases sensed by the metal oxide sensor.
公开/授权文献
- US07208327B2 Metal oxide sensors and method of forming 公开/授权日:2007-04-24